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DiodesZetex N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line, Through-Hole, Enhancement Mode VN10LP
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | VN10LP |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 270mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 625mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Rated for 270 mA continuous drain current for reliable operation.
- Withstands up to 60 V drain-source voltage in enhancement mode.
- Packaged in a standard 3-pin E-Line for easy through-hole mounting.
- Low drain-source resistance of 5Ω enhances circuit efficiency.
- Supports maximum power dissipation up to 625 mW.
- Operates over a wide temperature range from -55°C to 150°C.
- 20 V maximum gate-source voltage supports flexible circuit integration.
- Conforms to automotive AEC-Q101 standards for enhanced reliability.
Product Description
The DiodesZetex VN10LP N-Channel MOSFET is a compact, high-performance semiconductor device engineered for demanding electronic and industrial applications. Designed with a robust enhancement mode architecture, this MOSFET supports a maximum continuous drain current of 270 mA and a drain-source voltage up to 60 V, delivering reliable switching functionality and high efficiency in power management circuits.
The VN10LP features a compact 3-pin E-Line package, facilitating easy through-hole PCB mounting and simplified system integration. Its low drain-source resistance of 5Ω ensures minimal power losses, while the device can dissipate up to 625 mW of power, making it suitable for both low- and moderate-power electronic assemblies.
Rated for 270 mA continuous drain current for reliable operation. Withstands up to 60 V drain-source voltage in enhancement mode. Packaged in a standard 3-pin E-Line for easy through-hole mounting. Low drain-source resistance of 5Ω enhances circuit efficiency.
Supports maximum power dissipation up to 625 mW. Operates over a wide temperature range from -55°C to 150°C. 20 V maximum gate-source voltage supports flexible circuit integration. Conforms to automotive AEC-Q101 standards for enhanced reliability.
Suitable for discrete semiconductors, signal switching, and load control.
With a forward voltage of 1.1 V and flexibility to be used in a variety of electronic applications, this MOSFET is ideal for switching, power amplification, PWM motor drive, and protected load switching in automotive, industrial, and consumer electronics.
The VN10LP is crafted for superior performance in rigorous environments, offering an operating temperature range from -55°C to 150°C and exhibiting excellent tolerance to voltage transients. Its enhancement mode and N-channel configuration make it a preferred choice for designers seeking efficiency and reliability in DC-DC converters, relay drivers, or ON/OFF control circuits.
Trusted by engineers and designers, the DiodesZetex VN10LP combines robust construction, precise technical ratings, and versatile mounting capability, ensuring seamless compatibility with modern circuit boards and modules.
Discover more MOSFETs and semiconductor components from DiodesZetex and explore a wide range of solutions for your power switching, control, and amplification needs with EnvMart.
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Frequently Asked Questions
The VN10LP supports a maximum continuous drain current of 270 mA.
It can withstand a maximum drain-source voltage of 60 V in enhancement mode.
This model is packaged in a standard 3-pin E-Line configuration for easy through-hole mounting.
The device has a low drain-source resistance of 5Ω, which enhances circuit efficiency.
It supports a maximum power dissipation of up to 625 mW.
This model operates over a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage supported by this model is 20 V.
It conforms to the automotive AEC-Q101 standard for enhanced reliability.
The dimensions of this MOSFET are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height.
This MOSFET is suitable for applications such as switching, power amplification, PWM motor drive, and protected load switching.
It features an N-channel configuration in enhancement mode.
The forward voltage for this model is 1.1 V.
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