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Infineon OptiMOS 3 N-Channel MOSFET 100A 30V Enhancement Mode 8-Pin TDSON BSC020N03LSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC020N03LSGATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features type N-channel design for robust switching performance.
- Maximum continuous drain current of 100A allows for reliable high-current applications.
- Supports maximum drain-source voltage (Vds) up to 30V for versatile circuit requirements.
- Very low on-state resistance of 2.9mΩ reduces conduction losses.
- Surface mount 8-Pin TDSON package optimizes PCB layout and thermal performance.
- Gate-source voltage up to 20V and power dissipation up to 96W for robust operation.
- Ideally suited for DC/DC converter designs and SMPS topologies.
- Wide temperature range from -55°C to 150°C enables use in demanding environments.
Product Description
Infineon BSC020N03LSGATMA1 OptiMOS 3 N-Channel enhancement mode MOSFET is designed for power management applications, combining high current capability with very low on-resistance. Supporting a maximum continuous drain current of 100A and a drain-source voltage (Vds) of 30V, this device is ideal for switching power supplies, DC/DC converters, and demanding industrial or computing circuits.
Housed in an efficient 8-Pin TDSON surface mount package, the MOSFET delivers low conduction losses thanks to its extremely low Rds(on) value of just 2.9mΩ. With a gate-source threshold suitable for logic-level driving and a maximum gate-source voltage rating of 20V, the component is easy to integrate into automated and high-frequency circuit designs.
Type N-channel, enhancement mode for effective load switching and synchronous rectification. Continuous drain current up to 100A enables use in high-power applications. Maximum 30V Vds for compatibility with low-voltage to medium-voltage supplies.
Low Rds(on) 2.9mΩ for minimized power loss and improved thermal management. Forward voltage (Vf) 1.1V and gate charge 34nC enable fast switching dynamics. Works reliably from -55°C to 150°C, suitable for harsh environments and industrial standards.
8-pin TDSON package provides efficient thermal dissipation in compact footprints. Ideal for server VR circuits, POL converters, SMPS, and power distribution switches.
This product excels in applications where space and energy efficiency are crucial, including computing infrastructure, telecommunications, industrial automation equipment, power supply modules, and automotive subsystems (where AEC-Q101 is not required). With its automotive-grade quality and high reliability, the BSC020N03LSGATMA1 supports next-generation voltage regulation challenges and delivers robust performance for mission-critical designs.
Typical industrial and laboratory use cases include power conversion, efficient load management, and high-reliability switching. Its robust construction and Infineon's advanced OptiMOS 3 process provide confidence for engineers designing for high-performance, longevity, and demanding thermal conditions.
Browse more advanced MOSFETs and Infineon semiconductor solutions in the EnvMart electronics catalog to support your next industrial or technical project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100A, making it suitable for high-current applications.
The on-state resistance (Rds(on)) is very low at 2.9mΩ, which helps reduce conduction losses.
This MOSFET operates within a wide temperature range from -55°C to 150°C, suitable for demanding environments.
It is housed in an 8-pin TDSON surface mount package, which optimizes PCB layout and thermal performance.
The maximum power dissipation for this model is 96W, allowing for robust operation in power management applications.
The maximum gate-source voltage (Vgs) rating is 20V, making it compatible with logic-level driving.
The typical gate charge (Qg) at Vgs is 34nC, which enables fast switching dynamics.
The dimensions are 5.35mm in length, 6.35mm in width, and 1.1mm in height.
This model features a type N-channel design, which is suitable for effective load switching and synchronous rectification.
The forward voltage (Vf) is rated at 1.1V, which is relevant for its switching performance.
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