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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.1mm |
| Model | BSG0811NDATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | Power Block 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.25W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 4.5V |
| Forward Voltage Vf | 0.84V |
| Transistor Configuration | N Channel Mosfet |
Infineon BSG0811NDATMA1 OptiMOS 2 N-Channel MOSFET is engineered for high-efficiency power switching and dense circuit board layouts. With a maximum continuous drain current of 50A and drain-source voltage of 25V, it is ideal for demanding synchronous buck converters, server VRM modules, and battery-management systems.
This enhancement-mode N-channel MOSFET features an exceptionally low Rds(on) of 3mΩ, minimizing conduction losses, thus improving power efficiency. The Power Block 5x6 package is designed for surface-mount applications where space conservation is critical. It incorporates two elements per chip, providing parallel current paths that reduce die stress and enable symmetrical thermal distribution - key advantages for high-reliability power designs.
Offers a maximum continuous drain current of 50A for demanding loads. Operates at a maximum drain-source voltage of 25V, ideal for compact power conversion. Enhancement-mode N-channel design provides efficient logic-level switching.
Very low Rds(on) of 3mΩ facilitates reduced conduction losses in power electronics. Compact Power Block 5x6 package enables dense PCB layouts and space savings. Features dual-element per chip design for parallel current paths and improved thermal distribution.
Logic-level gate with maximum Vgs of 4.5V allows direct microcontroller drive. Typical gate charge of 8.4nC supports fast switching and low drive losses. Wide operational temperature range from -55°C to 150°C enhances durability.
Designed to operate efficiently in applications like synchronous buck converters, DC-DC modules, battery management, and motor-driver stages, this MOSFET supports fast gate transitions with a typical gate charge of 8.4nC.
Its compliance with JEDEC and RoHS standards, as well as manufacturing on IEC61249-2-21 substrate, assures material reliability and lead-free construction. The device is particularly suitable for industrial, server, and commercial systems requiring robust high-current switching and compact design.
Explore more OptiMOS 2 N-channel MOSFETs and other semiconductor devices from Infineon in the MOSFET category at EnvMart.
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