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Infineon OptiMOS 2 N-Channel MOSFET, 50A, 25V, Enhancement, Power Block 5x6, 8-Pin, BSG0811NDATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.1mm |
| Model | BSG0811NDATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | Power Block 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.25W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 4.5V |
| Forward Voltage Vf | 0.84V |
| Transistor Configuration | N Channel Mosfet |
Key Features
- Offers a maximum continuous drain current of 50A for demanding loads.
- Operates at a maximum drain-source voltage of 25V, ideal for compact power conversion.
- Enhancement-mode N-channel design provides efficient logic-level switching.
- Very low Rds(on) of 3mΩ facilitates reduced conduction losses in power electronics.
- Compact Power Block 5x6 package enables dense PCB layouts and space savings.
- Features dual-element per chip design for parallel current paths and improved thermal distribution.
- Logic-level gate with maximum Vgs of 4.5V allows direct microcontroller drive.
- Typical gate charge of 8.4nC supports fast switching and low drive losses.
Product Description
Infineon BSG0811NDATMA1 OptiMOS 2 N-Channel MOSFET is engineered for high-efficiency power switching and dense circuit board layouts. With a maximum continuous drain current of 50A and drain-source voltage of 25V, it is ideal for demanding synchronous buck converters, server VRM modules, and battery-management systems.
This enhancement-mode N-channel MOSFET features an exceptionally low Rds(on) of 3mΩ, minimizing conduction losses, thus improving power efficiency. The Power Block 5x6 package is designed for surface-mount applications where space conservation is critical. It incorporates two elements per chip, providing parallel current paths that reduce die stress and enable symmetrical thermal distribution - key advantages for high-reliability power designs.
Offers a maximum continuous drain current of 50A for demanding loads. Operates at a maximum drain-source voltage of 25V, ideal for compact power conversion. Enhancement-mode N-channel design provides efficient logic-level switching.
Very low Rds(on) of 3mΩ facilitates reduced conduction losses in power electronics. Compact Power Block 5x6 package enables dense PCB layouts and space savings. Features dual-element per chip design for parallel current paths and improved thermal distribution.
Logic-level gate with maximum Vgs of 4.5V allows direct microcontroller drive. Typical gate charge of 8.4nC supports fast switching and low drive losses. Wide operational temperature range from -55°C to 150°C enhances durability.
Designed to operate efficiently in applications like synchronous buck converters, DC-DC modules, battery management, and motor-driver stages, this MOSFET supports fast gate transitions with a typical gate charge of 8.4nC.
Its compliance with JEDEC and RoHS standards, as well as manufacturing on IEC61249-2-21 substrate, assures material reliability and lead-free construction. The device is particularly suitable for industrial, server, and commercial systems requiring robust high-current switching and compact design.
Explore more OptiMOS 2 N-channel MOSFETs and other semiconductor devices from Infineon in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 50A, making it suitable for demanding loads.
It features a very low Rds(on) of 3mΩ, which helps to minimize conduction losses in power electronics.
The device comes in a Power Block 5x6 package with dimensions of 5.1mm length, 6.1mm width, and 1.1mm height.
The typical gate charge for this MOSFET is 8.4nC, supporting fast switching and low drive losses.
It operates efficiently within a temperature range of -55°C to 150°C, enhancing its durability in various applications.
This model features two elements per chip, providing parallel current paths and improved thermal distribution.
It complies with JEDEC and RoHS standards, and is manufactured on an IEC61249-2-21 substrate, ensuring material reliability and lead-free construction.
The maximum gate-source voltage (Vgs) for this model is 4.5V, allowing for direct microcontroller drive.
The maximum power dissipation for this MOSFET is 6.25W, which is critical for managing thermal performance in high-current applications.
This device is configured as an N-channel MOSFET, which is commonly used for high-efficiency power switching.
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