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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SQD40020EL_GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.0022Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 165nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
The Vishay SQD40020EL_GE3 is an advanced TrenchFET N-Channel MOSFET engineered for demanding automotive, industrial, and commercial applications where high current and voltage handling are critical. With its ability to operate at a maximum drain current of 100A and a drain source voltage of up to 40V, it ensures robust performance in power circuits, switching power supplies, and motor controllers.
This MOSFET is built on Vishay's TrenchFET technology, providing low drain-source resistance (0.0022Ω) and reliable enhancement mode operation, enabling highly efficient switching with minimum thermal loss. The device is housed in a compact TO-252 surface-mount package (10.41mm length, 9.65mm width, 4.57mm height), making it ideal for densely populated PCBs and advanced system layouts. Its 3-pin configuration ensures straightforward integration for both surface-mount and automated assembly operations.
The SQD40020EL_GE3 is designed to withstand extreme conditions with a wide temperature range of -55°C to 175°C. With a maximum power dissipation of 107W, it delivers reliable performance for high-power delivery systems. The MOSFET features a typical gate charge of 165nC at Vgs, supporting fast switching and responsive control in pulse and PWM applications.
With full compliance to AEC-Q101 automotive standard, this MOSFET is validated for automotive environments requiring high reliability and endurance under rigorous conditions, including electric vehicles, automotive power distribution, and industrial controls. Forward voltage is rated at 1.5V and the maximum gate source voltage stands at 20V, offering flexibility in circuit design and robust protection against voltage spikes.
Key performance advantages include surface-mount design, low thermal resistance, and high electrical efficiency, making it suitable for battery packs, power management systems, and voltage regulation modules. Maximum drain-source voltage and substantial drain current rating allow this device to serve for inverters, industrial machinery, and heavy-duty power drivers.
Industrial use cases include power distribution units, motor drivers, switching converters, and energy management in automotive, manufacturing, and electronics sectors. Laboratory and research applications benefit from accurate voltage/current control and reliable switching performance.
To review more Vishay MOSFETs and related semiconductor products, explore the Electronics & Electricals category at EnvMart.
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Vishay TrenchFET Type N-Channel MOSFET, 100A, 40V, TO-252, 3-Pin, Enhancement Mode SQD40020EL_GE3
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Vishay TrenchFET Type N-Channel MOSFET, 100A, 40V, TO-252, 3-Pin, Enhancement Mode SQD40020EL_GE3
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