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Vishay TrenchFET Type N-Channel MOSFET, 100A, 40V, TO-252, 3-Pin, Enhancement Mode SQD40020EL_GE3

Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.57mm
Length 10.41mm
Model SQD40020EL_GE3
Width 9.65mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.0022Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 107W
Typical Gate Charge Qg @ Vgs 165nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • Supports maximum continuous drain current of 100A, suitable for heavy-duty power switching.
  • Operates at maximum drain source voltage of 40V, offering robust voltage tolerance.
  • Enhancement mode provides efficient switching performance and high reliability.
  • Compact TO-252 surface-mount package with 3-pin configuration for easy PCB integration.
  • Low drain source resistance of 0.0022Ω results in reduced power dissipation.
  • Wide temperature range of -55°C to 175°C for automotive and industrial environments.
  • Maximum power dissipation rated at 107W, supporting high-power applications.
  • Complies with AEC-Q101 automotive standards for enhanced quality and reliability.

Product Description

The Vishay SQD40020EL_GE3 is an advanced TrenchFET N-Channel MOSFET engineered for demanding automotive, industrial, and commercial applications where high current and voltage handling are critical. With its ability to operate at a maximum drain current of 100A and a drain source voltage of up to 40V, it ensures robust performance in power circuits, switching power supplies, and motor controllers.

This MOSFET is built on Vishay's TrenchFET technology, providing low drain-source resistance (0.0022Ω) and reliable enhancement mode operation, enabling highly efficient switching with minimum thermal loss. The device is housed in a compact TO-252 surface-mount package (10.41mm length, 9.65mm width, 4.57mm height), making it ideal for densely populated PCBs and advanced system layouts. Its 3-pin configuration ensures straightforward integration for both surface-mount and automated assembly operations.

The SQD40020EL_GE3 is designed to withstand extreme conditions with a wide temperature range of -55°C to 175°C. With a maximum power dissipation of 107W, it delivers reliable performance for high-power delivery systems. The MOSFET features a typical gate charge of 165nC at Vgs, supporting fast switching and responsive control in pulse and PWM applications.

With full compliance to AEC-Q101 automotive standard, this MOSFET is validated for automotive environments requiring high reliability and endurance under rigorous conditions, including electric vehicles, automotive power distribution, and industrial controls. Forward voltage is rated at 1.5V and the maximum gate source voltage stands at 20V, offering flexibility in circuit design and robust protection against voltage spikes.

Key performance advantages include surface-mount design, low thermal resistance, and high electrical efficiency, making it suitable for battery packs, power management systems, and voltage regulation modules. Maximum drain-source voltage and substantial drain current rating allow this device to serve for inverters, industrial machinery, and heavy-duty power drivers.

Industrial use cases include power distribution units, motor drivers, switching converters, and energy management in automotive, manufacturing, and electronics sectors. Laboratory and research applications benefit from accurate voltage/current control and reliable switching performance.

To review more Vishay MOSFETs and related semiconductor products, explore the Electronics & Electricals category at EnvMart.

Vishay TrenchFET Type N-Channel MOSFET, 100A, 40V, TO-252, 3-Pin, Enhancement Mode SQD40020EL_GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 100A, making it suitable for heavy-duty power switching applications.

It can operate at a maximum drain-source voltage of 40V, providing robust voltage tolerance for various applications.

This MOSFET is housed in a TO-252 surface-mount package with dimensions of 10.41mm length, 9.65mm width, and 4.57mm height.

The typical gate charge at Vgs is 165nC, which supports fast switching and responsive control in pulse and PWM applications.

It has a maximum power dissipation rating of 107W, suitable for high-power applications.

This model operates within a temperature range of -55°C to 175°C, making it suitable for both automotive and industrial environments.

It features an enhancement mode N-channel design, which provides efficient switching performance and high reliability.

The maximum gate-source voltage is rated at 20V, allowing flexibility in circuit design.

It complies with AEC-Q101 automotive standards, ensuring enhanced quality and reliability for automotive applications.

The maximum drain-source resistance is 0.0022Ω, which contributes to reduced power dissipation during operation.

The TO-252 package features a 3-pin configuration, facilitating easy integration into PCBs.

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