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STMicroelectronics MDmesh DM2 N-Channel MOSFET 50A 600V Enhancement TO-247 STW56N60DM2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW56N60DM2 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh DM2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360W |
| Typical Gate Charge Qg @ Vgs | 90nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | -5.5V |
Key Features
- Features a high maximum continuous drain current of 50A.
- Operates at a maximum drain-source voltage of 600V for robust performance.
- Utilizes enhancement mode channel for efficient switching applications.
- Low drain-source resistance of 60mΩ provides improved efficiency.
- Packaged in TO-247 and designed for through hole mounting.
- Offers improved reverse recovery time for increased power conversion reliability.
- Suitable for full-bridge phase-shifted ZVS topologies in industrial power systems.
- Supports high dV/dt capability for enhanced system reliability in demanding applications.
Product Description
STMicroelectronics STW56N60DM2 is a high-performance N-Channel MDmesh DM2 series MOSFET designed for demanding industrial and electronic applications requiring high current and voltage handling. With a maximum continuous drain current of 50A and maximum drain-source voltage of 600V, this device excels in power conversion and switching operations across a wide variety of systems.
The MOSFET utilizes enhancement mode operation, offering efficient switching characteristics and low drain-source resistance of 60mΩ for minimizing power loss. Its TO-247 package, coupled with through hole mounting, ensures secure installation and robust thermal management. The typical gate charge at Vgs is 90nC, and the device can operate reliably across extreme temperatures, from -55°C up to 150°C.
This MDmesh DM2 series delivers improved reverse recovery time and high dV/dt capability, supporting stability and reliability in advanced topologies such as full-bridge phase-shifted ZVS designs frequently used in industrial, power supply, and motor control systems. The MOSFET is also AEC-Q101 qualified, reflecting its suitability for rigorous automotive and commercial environments.
Compact dimensions of 20.15mm height, 5.15mm width, and 15.75mm length allow integration in high-density PCB layouts. Its 3-pin configuration makes it well-suited for typical MOSFET control circuits.
MDmesh DM2 MOSFETs are ideal for high-efficiency, high-reliability industrial, laboratory, manufacturing, and commercial applications, including water treatment, power distribution, and advanced electronic systems.
Maximum drain current of 50A enables handling substantial loads. 600V rating covers demanding voltage requirements for industrial use. Low-resistance and efficient switching lower energy losses. TO-247 package supports sturdy mounting and heat dissipation.
Enhanced recovery performance supports fast switching in power supplies. Reliable operation across wide temperature range. Suitable in lab, manufacturing, commercial, and power system environments. Robust component for demanding electronic equipment.
Explore more STMicroelectronics semiconductor products and MOSFETs in the industrial electronics catalogs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 50A.
It operates at a maximum drain-source voltage of 600V.
This MOSFET features a low drain-source resistance of 60mΩ.
It is packaged in a TO-247 format and designed for through hole mounting.
This model can operate reliably across a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 90nC.
It is suitable for full-bridge phase-shifted ZVS topologies in industrial power systems, as well as various high-efficiency applications.
The maximum power dissipation is rated at 360W.
This model has a 3-pin configuration.
It utilizes an enhancement mode N-channel design.
The forward voltage is specified at -5.5V.
The high dV/dt capability enhances system reliability in demanding applications, allowing for improved performance under rapid voltage changes.
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