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STMicroelectronics STripFET Type N-Channel MOSFET, 6 A, 20 V, Enhancement Mode, 8-Pin SOIC STS6NF20V

Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.25mm
Length 5mm
Model STS6NF20V
Width 4mm
Mount Type Surface
Series STripFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type N
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 8.5nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features a maximum drain-source resistance of 45 milliohms for efficient conduction.
  • It supports a maximum power dissipation of 2.5 watts, suitable for compact power applications.
  • Operating temperature range extends from -55°C to 150°C ensuring reliability in harsh environments.
  • Maximum gate-source voltage rating is 12 V to withstand strong control signals.
  • Physical dimensions include a height of 1.25 mm, length of 5 mm, and width of 4 mm, optimizing PCB space.
  • Typical gate charge is 8.5 nC @ Vgs facilitating fast switching performance.
  • Package type is surface mount SOIC offering ease of assembly in automated production.
  • The device is a part of the STripFET series tailored for power management and switching in electronics.

Product Description

STMicroelectronics STS6NF20V is a Type N-Channel STripFET enhancement mode MOSFET designed for high efficiency power switching and amplification. It supports a continuous drain current of 6 amperes and maximum drain-source voltage of 20 volts, making it suitable for medium power electronics applications.

The device comes in a compact surface mount SOIC package with 8 pins, enabling easy integration into dense circuit boards. Its low maximum drain-source resistance of 45 milliohms ensures reduced power loss during conduction, advancing energy efficiency.

Designed for reliable operation across a wide temperature range from -55°C to 150°C, it is suitable for industrial and commercial electronic devices exposed to varying environments. The MOSFET features a typical gate charge of 8.5 nanocoulombs at gate-source voltage, allowing rapid switching necessary in modern control circuits.

With a maximum power dissipation rating of 2.5 watts, it fits well in applications requiring moderate power handling without extensive cooling requirements. Its physical dimensions - 1.25 mm in height, 5 mm in length, and 4 mm in width - allow compact PCB layouts, critical for space-sensitive electronics.

This MOSFET is optimized for power management, switching regulators, and amplification tasks in electronics manufacturing. The device's surface mount design supports automated assembly lines in commercial production. It contributes to efficient energy conversion in consumer electronics, automotive electronics, and industrial equipment.

Its robust construction and temperature tolerance make it suitable for harsh industrial and laboratory use. Operating within automotive standards is not applicable, but the product is built for durable, long-lasting use.

STMicroelectronics products like the STS6NF20V are essential components for electronic engineers designing with power MOSFETs in the semiconductor category. Explore EnvMart's selection for comprehensive industrial and commercial options.

STMicroelectronics STripFET Type N-Channel MOSFET, 6 A, 20 V, Enhancement Mode, 8-Pin SOIC STS6NF20V
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 amperes.

It has a maximum drain-source voltage rating of 20 volts.

The maximum power dissipation is rated at 2.5 watts.

The dimensions are 1.25 mm in height, 5 mm in length, and 4 mm in width.

The operating temperature range extends from -55°C to 150°C.

It comes in a surface mount SOIC package with 8 pins.

The typical gate charge is 8.5 nanocoulombs at gate-source voltage.

The maximum drain-source resistance is 45 milliohms.

The maximum gate-source voltage rating is 12 volts.

This model is part of the STripFET series.

It features a Type N channel.

It is optimized for power management, switching regulators, and amplification tasks in electronics.

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