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onsemi Dual N-Channel Small Signal MOSFET, 540 mA, 20 V, Enhancement, 6-Pin SOT-563 NTZD3154NT1G

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onsemi Dual N-Channel Small Signal MOSFET, 540 mA, 20 V, Enhancement, 6-Pin SOT-563 NTZD3154NT1G

Name: onsemi Dual N-Channel Small Signal MOSFET, 540 mA, 20 V, Enhancement, 6-Pin SOT-563 NTZD3154NT1G
Brand: onsemi
SKU: 82511
Price: 0.1 USD
Availability: InStock

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Category MOSFETs Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	0.6mm
Length	1.7mm
Model	NTZD3154NT1G
Width	1.3mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-563
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type N
Maximum Continuous Drain Current Id	540mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	900mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	250mW
Typical Gate Charge Qg @ Vgs	1.5nC
Maximum Gate Source Voltage Vgs	7V
Forward Voltage Vf	0.7V
Transistor Configuration	Dual

Key Features

Dual N-channel enhancement MOSFET chip improves performance and design flexibility.
20 V maximum drain source voltage for robust signal and power switching applications.
540 mA maximum drain current accommodates low and moderate power requirements.
Compact 6-pin SOT-563 surface-mount package allows for space-saving PCB designs.
Low RDS(on) of 900 mΩ increases system efficiency and minimizes heat generation.
Fast switching enabled by typical 1.5 nC gate charge at Vgs.
Maximum power dissipation of 250 mW supports portable and embedded electronics.
Wide operating temperature range from -55°C to 150°C ensures reliable performance.

Product Description

The onsemi NTZD3154NT1G Dual N-Channel Small Signal MOSFET is a high-performance semiconductor device engineered for modern electronic circuits requiring efficient switching and low power loss. Featuring enhancement mode operation and two N-channel MOSFETs on one chip, this model is designed for applications such as load and power switches, converter circuits, and battery management.

With a maximum continuous drain current of 540 mA and a maximum drain source voltage of 20 V, the NTZD3154NT1G delivers reliable performance for low to moderate power switching tasks. Its compact SOT-563 surface-mount package, measuring just 1.7 mm in length, 1.3 mm in width, and 0.6 mm in height, helps engineers achieve dense PCB layouts and miniaturize designs without sacrificing electrical characteristics.

System efficiency is improved thanks to the low maximum drain source resistance of just 900 mΩ, which minimizes heat generation during operation. The enhancement channel mode ensures precise control of the device, while a typical gate charge of 1.5 nC at Vgs enables fast switching responses vital in converter and power management systems. The dual transistor configuration provides flexibility in circuit design by allowing independent or paired operation.

This MOSFET is rated for a maximum power dissipation of 250 mW, making it suitable for portable devices and compact applications. It operates reliably within a wide temperature range from -55°C up to 150°C, supporting industrial, commercial, and harsh-environment electronics.

Additional features include forward voltage (Vf) of 0.7 V and maximum gate source voltage (Vgs) of 7 V. ESD protection for the gate makes NTZD3154NT1G valuable for battery-powered designs and sensitive switching applications.

Ideal use cases include load/power switches, converter circuits in power supply designs, and battery management in consumer, industrial, and automotive electronics. The device is compliant with standard quality requirements and does not adhere to a specific automotive standard.

For specialized MOSFETs and semiconductor solutions, explore more options from the 'onsemi' brand in the MOSFETs category at EnvMart.