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Vishay N-Channel MOSFET 120A 40V TO-263 Enhancement SQM40041EL_GE3

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Vishay N-Channel MOSFET 120A 40V TO-263 Enhancement SQM40041EL_GE3

Name: Vishay N-Channel MOSFET 120A 40V TO-263 Enhancement SQM40041EL_GE3
Brand: Vishay
SKU: 83019
Price: 2.12 USD
Availability: InStock

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.57mm
Length	10.41mm
Model	SQM40041EL_GE3
Width	9.65mm
Mount Type	Surface
Series	SQM40041EL
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	AEC-Q101
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.0034Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	157W
Typical Gate Charge Qg @ Vgs	288nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.5V

Key Features

Maximum continuous drain current of 120A for robust performance.
Drain-source voltage rating of 40V suitable for power applications.
Three-pin TO-263 surface mount package enhances thermal management.
Low resistance Rds(on) of 0.0034Ω improves efficiency and reduces losses.
Suitable for automotive systems meeting AEC-Q101 standards.
Wide temperature range from -55°C to 175°C for diverse environments.
High power dissipation capacity of 157W supports heavy-duty operation.

Product Description

The Vishay SQM40041EL_GE3 is an N-Channel MOSFET designed for high-performance power switching and control in automotive and industrial electronics. With a maximum continuous drain current of 120A and a drain-source voltage rating of 40V, it is ideal for demanding applications where efficiency and reliable operation are critical. The enhancement-mode channel supports fast switching with minimal gate charge.

This MOSFET comes in a TO-263 surface mount package, known for its low thermal resistance, which facilitates excellent heat dissipation under high-power operation. Its low drain-source resistance of 0.0034Ω maximizes efficiency, helping to minimize power losses even at high currents. The SQM40041EL_GE3 is compliant with AEC-Q101 automotive standards, ensuring reliability across a wide operational temperature range from -55°C up to 175°C.

Typical gate charge is 288nC at Vgs, enabling rapid switching and making this component suitable for control circuits, battery management, inverters, and power distribution units. Rated for a maximum power dissipation of 157W, the device is engineered to support robust, heavy-duty performance where thermal management is vital.

The package dimensions are compact: 10.41mm length, 9.65mm width, 4.57mm height, allowing for integration into dense PCB layouts. The three-pin configuration is ideal for automated surface-mount assembly. Forward voltage is rated at 1.5V; maximum gate-source voltage is 20V for safe logic interface.

Common use cases include automotive electronic control units, industrial motor drivers, renewable energy inverters, power conversion equipment, and other commercial high-power switching systems. The device's wide temperature tolerance makes it suitable for environments experiencing frequent thermal cycling.

Maximum continuous drain current of 120A for robust performance. Drain-source voltage rating of 40V suitable for power applications. Three-pin TO-263 surface mount package enhances thermal management. Low resistance Rds(on) of 0.0034Ω improves efficiency and reduces losses.

Suitable for automotive systems meeting AEC-Q101 standards. Wide temperature range from -55°C to 175°C for diverse environments. High power dissipation capacity of 157W supports heavy-duty operation. Explore more Vishay MOSFET products and similar semiconductors in the Electronics & Electricals category on EnvMart.

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Frequently Asked Questions

The maximum continuous drain current for this model is 120A, making it suitable for robust performance in demanding applications.

This MOSFET has a drain-source voltage rating of 40V, which is appropriate for various power applications.

The SQM40041EL_GE3 comes in a TO-263 surface mount package, which enhances thermal management due to its low thermal resistance.

The low drain-source resistance (Rds(on)) is 0.0034Ω, which helps improve efficiency and reduce power losses.

It operates over a wide temperature range from -55°C to 175°C, making it suitable for diverse environments.

The maximum power dissipation capacity of this model is 157W, supporting heavy-duty operation in various applications.

This MOSFET is compliant with AEC-Q101 automotive standards, ensuring reliability in automotive applications.

The typical gate charge for this model is 288nC at Vgs, enabling rapid switching capabilities.

The dimensions of the TO-263 package are 10.41mm in length, 9.65mm in width, and 4.57mm in height.

This model features a three-pin configuration, which is suitable for automated surface-mount assembly.

The maximum gate-source voltage for this MOSFET is 20V, which is safe for logic interface applications.

Common applications include automotive electronic control units, industrial motor drivers, renewable energy inverters, and power conversion equipment.