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IXYS HiperFET Polar Type N-Channel MOSFET, 96A 200V Enhancement 3-Pin TO-247 IXFH96N20P
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| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH96N20P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 96A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 600W |
| Typical Gate Charge Qg @ Vgs | 145nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
The IXYS IXFH96N20P is a high-performance HiperFET Polar series N-channel power MOSFET designed for advanced power control applications. Featuring a 96A maximum continuous drain current and 200V drain-source voltage, this device excels in demanding power switching environments. Its TO-247 package provides excellent thermal dissipation and mechanical robustness, making it ideal for high-power industrial use.
The enhancement mode channel ensures efficient and rapid switching, suitable for circuit designs that require high-speed operation. The device’s low on-resistance of 24 milliohms minimizes energy loss, improving system efficiency and reliability in applications such as motor drives, switching power supplies, and inverter circuits. With a maximum power dissipation of 600W, the MOSFET supports heavy duty loads while maintaining high performance.
Key technical features include a typical gate charge of 145nC, facilitating quick transitions and optimized gate control. The maximum gate-source voltage rating of 20V protects against overvoltage occurrences, and the integrated fast intrinsic diode further enhances operational efficiency by reducing switching losses. The forward voltage drop is rated at 1.5V, supporting reliable operation in various configurations.
The IXFH96N20P operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for industrial, laboratory, and manufacturing environments. Its 3-pin TO-247 package simplifies PCB and power stage integration, supporting straightforward through-hole mounting. The compact design, with dimensions of 21.46mm height, 16.26mm length, and 5.3mm width, streamlines assembly and meets industry standards of fit and function.
Industrial use cases for the IXYS IXFH96N20P include high-efficiency power conversion, advanced motor control, photovoltaic and renewable energy systems, battery switching, and power management in commercial equipment. Its ruggedness and technical features make it a trusted choice for engineers designing robust electronic systems.
High-performance N-channel MOSFET for power electronics and industrial automation. Supports heavy-duty loads in demanding circuits with 96A drain current and 600W power dissipation. Ideal for applications requiring robust switching, such as motor drives, power supplies, and renewable energy systems.
TO-247 package with through-hole mounting for excellent thermal and mechanical stability. Suitable for industrial, commercial, laboratory, and manufacturing environments. Browse more IXYS MOSFETs or related semiconductors in the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart.
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IXYS HiperFET Polar Type N-Channel MOSFET, 96A 200V Enhancement 3-Pin TO-247 IXFH96N20P
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