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IXYS HiperFET Polar Type N-Channel MOSFET, 96A 200V Enhancement 3-Pin TO-247 IXFH96N20P

Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 21.46mm
Length 16.26mm
Model IXFH96N20P
Width 5.3mm
Mount Type Through Hole
Series HiperFET, Polar
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 96A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 24mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 600W
Typical Gate Charge Qg @ Vgs 145nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.5V

Key Features

  • High-performance N-channel MOSFET with 96A maximum continuous drain current.
  • Rated for up to 200V drain-source voltage for demanding power electronics applications.
  • TO-247 package ensures robust thermal management and easy through-hole mounting.
  • Low on-resistance of 24 milliohms for efficient switching performance.
  • Supports maximum power dissipation up to 600W for high-load setups.
  • Enhancement channel mode enables rapid switching and control.
  • Operates across a wide temperature range from -55°C to 175°C.
  • Gate charge of 145nC allows fast response times with typical gate drive voltage up to 20V.

Product Description

The IXYS IXFH96N20P is a high-performance HiperFET Polar series N-channel power MOSFET designed for advanced power control applications. Featuring a 96A maximum continuous drain current and 200V drain-source voltage, this device excels in demanding power switching environments. Its TO-247 package provides excellent thermal dissipation and mechanical robustness, making it ideal for high-power industrial use.

The enhancement mode channel ensures efficient and rapid switching, suitable for circuit designs that require high-speed operation. The device’s low on-resistance of 24 milliohms minimizes energy loss, improving system efficiency and reliability in applications such as motor drives, switching power supplies, and inverter circuits. With a maximum power dissipation of 600W, the MOSFET supports heavy duty loads while maintaining high performance.

Key technical features include a typical gate charge of 145nC, facilitating quick transitions and optimized gate control. The maximum gate-source voltage rating of 20V protects against overvoltage occurrences, and the integrated fast intrinsic diode further enhances operational efficiency by reducing switching losses. The forward voltage drop is rated at 1.5V, supporting reliable operation in various configurations.

The IXFH96N20P operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for industrial, laboratory, and manufacturing environments. Its 3-pin TO-247 package simplifies PCB and power stage integration, supporting straightforward through-hole mounting. The compact design, with dimensions of 21.46mm height, 16.26mm length, and 5.3mm width, streamlines assembly and meets industry standards of fit and function.

Industrial use cases for the IXYS IXFH96N20P include high-efficiency power conversion, advanced motor control, photovoltaic and renewable energy systems, battery switching, and power management in commercial equipment. Its ruggedness and technical features make it a trusted choice for engineers designing robust electronic systems.

High-performance N-channel MOSFET for power electronics and industrial automation. Supports heavy-duty loads in demanding circuits with 96A drain current and 600W power dissipation. Ideal for applications requiring robust switching, such as motor drives, power supplies, and renewable energy systems.

TO-247 package with through-hole mounting for excellent thermal and mechanical stability. Suitable for industrial, commercial, laboratory, and manufacturing environments. Browse more IXYS MOSFETs or related semiconductors in the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart.

IXYS HiperFET Polar Type N-Channel MOSFET, 96A 200V Enhancement 3-Pin TO-247 IXFH96N20P
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Frequently Asked Questions

The IXFH96N20P has a maximum continuous drain current of 96A.

This model is rated for a maximum drain-source voltage of 200V.

It comes in a TO-247 package, which allows for through-hole mounting.

The on-resistance is rated at 24 milliohms, which contributes to efficient switching performance.

The typical gate charge is 145nC, allowing for fast response times.

It supports a maximum power dissipation of up to 600W.

The IXFH96N20P operates across a wide temperature range from -55°C to 175°C.

The maximum gate-source voltage rating is 20V.

The dimensions are 21.46mm in height, 16.26mm in length, and 5.3mm in width.

It is suitable for applications such as motor drives, power supplies, and renewable energy systems.

The IXFH96N20P features an enhancement mode N-channel.

The forward voltage drop is rated at 1.5V, supporting reliable operation.

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