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Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement Mode, 3-Pin TO-247 SPW20N60C3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.95mm |
| Length | 15.9mm |
| Model | SPW20N60C3FKSA1 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20.7A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 87nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- N-Channel enhancement mode MOSFET for efficient power control applications.
- Maximum continuous drain current of 20.7 A supports high load conditions.
- 650 V maximum drain-source voltage ensures reliability in high voltage circuits.
- Low typical gate charge of 87 nC allows fast switching with reduced switching losses.
- Maximum power dissipation rating of 208 W enables operation in demanding thermal environments.
- Designed for through-hole mounting with a compact TO-247 package for easy PCB assembly.
- Automotive standard AEC-Q101 compliance provides enhanced reliability for automotive applications.
- Wide operating temperature range from -55°C to 150°C suits harsh industrial environments.
Product Description
Infineon SPW20N60C3FKSA1 is a CoolMOS C3 series N-Channel enhancement mode MOSFET designed to handle high voltages up to 650 V and continuous drain currents of 20.7 A. Packaged in a 3-pin TO-247 through-hole configuration, it offers excellent conduction and switching performance necessary for demanding electronic applications.
With a maximum power dissipation of 208 W and a maximum operating temperature of 150°C, this MOSFET is engineered to operate reliably in industrial and automotive environments. Its low typical gate charge of 87 nC ensures efficient high-speed switching, reducing energy loss and enhancing overall device performance.
The device is compliant with the automotive AEC-Q101 standard, ensuring stringent quality and reliability for automotive and industrial use cases. The SPW20N60C3FKSA1 MOSFET is suitable for power supply regulation, motor control systems, DC-DC converters, renewable energy inverters, and general power electronics requiring robust and efficient N-channel MOSFETs.
N-channel configuration optimizes conduction and switching efficiency. High voltage rating supports challenging power circuit requirements. Through-hole TO-247 package facilitates mechanical stability and assembly. Wide operating temperature range for industrial and automotive environments.
Low gate charge reduces switching losses and improves efficiency. Supports high power dissipation for thermal management. Automotive-grade reliability with AEC-Q101 qualification. Applications include industrial automation, power management, renewable energy, and motor drives.
This Infineon CoolMOS C3 MOSFET series product represents a reliable solution for electronic component designers seeking durable and efficient power semiconductors. It is widely used across industrial electronics, automotive systems, manufacturing equipment, and water treatment controls. Browse EnvMart’s selection for similar high-performance MOSFETs and semiconductor devices from top brands.
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Frequently Asked Questions
The maximum continuous drain current of this model is 20.7 A.
It has a maximum drain-source voltage rating of 650 V.
The typical gate charge is 87 nC, which allows for fast switching with reduced losses.
The maximum power dissipation rating is 208 W, enabling operation in demanding thermal environments.
The operating temperature range spans from -55°C to 150°C, suitable for harsh industrial environments.
This model is designed for through-hole mounting with a compact TO-247 package.
It complies with the AEC-Q101 automotive standard, ensuring enhanced reliability for automotive applications.
The dimensions are 20.95 mm in height, 15.9 mm in length, and 5.3 mm in width.
It is suitable for applications such as power supply regulation, motor control systems, and renewable energy inverters.
The maximum gate-source voltage is 20 V.
This model features an N-channel configuration, which optimizes conduction and switching efficiency.
The maximum drain-source resistance is 190 mΩ, contributing to its efficiency.
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