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Vishay E N-Channel Power MOSFET 42A 650V Depletion Mode 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK055N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | +150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 0.056Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 236W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high-voltage switching with a 650V rating.
- Supports a continuous drain current of 42 amperes for heavy-load operation.
- Low drain-source resistance of 0.056 ohms reduces conduction losses.
- Capable of dissipating 236 watts of power for sustained throughput.
- Typical gate charge of 54 nC minimizes switching energy consumption.
- Robust gate tolerance with a maximum gate-source voltage of 30 volts.
- Compact 8-pin PowerPAK 10 x 12 surface-mount package for dense PCB layouts.
- Operating temperature range from -55°C to +150°C suits extreme ambient conditions.
Product Description
Vishay SIHK055N60E-T1-GE3 is a high-voltage N-Channel Power MOSFET designed specifically for demanding power conversion and automotive control systems. Rated for 650 volts drain-source voltage and 42 amperes maximum continuous drain current, this device excels in heavy-load switching tasks while maintaining efficiency with a low 0.056 ohm Rds(on).
The device utilizes depletion channel mode and is packaged in a compact 8-pin PowerPAK 10 x 12 surface mount format. This low-profile package facilitates efficient PCB thermal conduction and supports high-density electronic assemblies commonly found in automotive and industrial systems.
Operating over a broad temperature range from -55 degrees Celsius to +150 degrees Celsius, it ensures reliability in harsh environments and under the hood of vehicles. The device meets AEC-Q101 automotive standards, making it suitable for vehicular electronics requiring robust and certified components.
Its typical gate charge of 54 nanocoulombs enables minimal switching losses, and the gate-source voltage tolerance up to 30 volts provides a resilient drive margin for robust operation. The forward voltage is 1.2 volts, complementing the device's efficient energy handling in power stages.
Common applications include traction inverter stage power switches, high-voltage DC-DC converter outputs, and motor-drive controllers within automotive and industrial power-supply switching architectures. The PowerPAK package supports effective thermal management, which allows for a maximum power dissipation of 236 watts under sustained operating conditions.
Suitable for traction inverter stage power switches. Ideal for high-voltage DC-DC converter output stages. Used extensively in automotive motor-drive control systems. Acceptable for industrial power supply switching applications.
Compact PowerPAK 10x12 package facilitates dense PCB layouts and thermal management. Explore the complete Vishay MOSFET portfolio for further power semiconductor solutions suitable for industrial, automotive, and manufacturing electronics at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 42 amperes.
This MOSFET is rated for a maximum drain-source voltage of 650 volts.
It comes in a compact 8-pin PowerPAK 10 x 12 surface mount package.
The typical gate charge for this MOSFET is 54 nanocoulombs.
The operating temperature range for this model is from -55°C to +150°C.
It can dissipate a maximum power of 236 watts.
The maximum drain-source resistance (Rds(on)) is 0.056 ohms.
It meets the AEC-Q101 automotive standard.
The maximum gate-source voltage for this device is 30 volts.
It is suitable for applications such as traction inverter stage power switches and high-voltage DC-DC converter outputs.
The forward voltage is 1.2 volts.
This model is an N-channel MOSFET.
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