DiodesZetex Isolated 2 N-Channel Power MOSFET, 9.3 A, 20 V Enhancement Mode, 7-Pin UDFN DMN2014LHAB-7

DiodesZetex DMN2014LHAB-7 is an isolated dual N-Channel power MOSFET featuring enhancement mode operation and a maximum continuous drain current of 9.3 A with a drain-source voltage of 20 V. Packaged in a compact 7-pin UDFN surface mount form factor, this device is engineered for efficient power management and switching applications.

With a low maximum drain-source resistance of 28 mΩ, the DMN2014LHAB-7 offers reduced conduction losses, making it ideal for applications demanding high efficiency. The device supports a broad operating temperature range from -55°C to +150°C, ensuring reliable performance in harsh environments, including automotive electronics.

The typical gate charge of 0.5 nC at specified gate-source voltage allows for fast switching with low gate drive power. The maximum power dissipation rating of 1.7 W suits low to medium power circuits, while the device complies with stringent industry standards such as AEC-Q101, UL 94V-0, RoHS, J-STD-020, and MIL-STD-202, confirming its quality and robustness.

Key mechanical dimensions of length 3.05 mm, width 2.05 mm, and height 0.6 mm enable integration into space-constrained electronic assemblies.

These features make the DMN2014LHAB-7 suitable for industrial automation, automotive electronics, power supply circuits, and other demanding semiconductor applications requiring high current, isolation, and temperature resilience. The device’s isolated transistor configuration supports versatile circuit designs where electrical isolation is necessary.

Dual N-Channel MOSFET providing isolated transistor functionality. 7-pin UDFN surface mount package enhancing compactness and mounting flexibility. Maximum continuous drain current of 9.3 A ensures reliable power handling.

Low maximum drain-source resistance of 28 mΩ improves efficiency. Broad temperature operation from -55°C to +150°C for harsh environments. Typical gate charge of 0.5 nC enables efficient switching performance. Maximum power dissipation of 1.7 W suits low-medium power applications.

Compliances include automotive and industrial standards (AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202). Compact size with 3.05 mm length, 2.05 mm width, and 0.6 mm height. Explore more Power MOSFET products in the Electronics & Electricals category on EnvMart for industrial, automotive, and power management applications.