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onsemi N-Channel MOSFET 68 A, 80 V, Enhancement Mode, 8-Pin WDFN Surface Mount Package NTTFS6H850NTAG
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.15mm |
| Model | NTTFS6H850NTAG |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | NTTFS6H850N |
| Maximum Operating Temperature | 175°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 68A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 9.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 3.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device features an 8-pin WDFN surface mount package with a compact 3.15 mm by 3.15 mm footprint.
- It delivers low on-resistance (9.5 mΩ) and low typical gate charge (3.6 nC) for efficient switching.
- Supports a maximum power dissipation of 107 W and operates between -55°C to 175°C.
- Enhancement mode channel type ensures reliable control in high side and low side driver applications.
- Engineered for compact, efficient designs in industrial, automotive, and power management electronics.
- Ideal for motor control, battery management, synchronous rectification, and switching power supplies.
- High gate-source voltage tolerance up to 20 V and forward voltage of 1.2 V.
- Manufactured in Malaysia adhering to commercial power MOSFET standards.
Product Description
The onsemi NTTFS6H850NTAG is a reliable and high-performance N-Channel MOSFET optimized for efficient power switching, featuring a maximum continuous drain current of 68 A and maximum drain-source voltage of 80 V. Packaged in a surface mount 8-pin WDFN package, this device offers a compact footprint of 3.15 mm by 3.15 mm and a low profile of 750 μm height, making it suitable for space-constrained industrial and commercial electronic designs.
Designed with enhancement-mode channel technology, the NTTFS6H850NTAG supports high current and voltage demands while minimizing conduction and switching losses due to its low Rds(on) of 9.5 mΩ and typical gate charge of 3.6 nC at Vgs. It withstands power dissipation up to 107 W and allows an operating temperature range from -55°C up to 175°C, ensuring durability in harsh conditions.
This MOSFET is ideal for applications such as reversible battery protection, high and low side power switches, H-bridge configurations, synchronous rectification, motor control, battery management, and switching power supplies, making it a versatile component for industrial, automotive, HVAC, and manufacturing environments.
Compact 3x3 mm WDFN package enables high-density PCB layouts. Low on-resistance and gate charge contribute to energy-efficient switching operation. Capability to handle high power levels up to 107 W with wide operating temperature range.
Enhanced device robustness with maximum gate-source voltage of 20 V. Applicable in diverse use cases including power management and motor control systems. Manufactured in Malaysia, ensuring quality and compliance with commercial standards.
Explore our wide range of semiconductor solutions and Power MOSFET devices on EnvMart, designed to meet industrial and commercial electronic demands.
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Frequently Asked Questions
The maximum continuous drain current for the NTTFS6H850NTAG is 68 A.
It can handle a maximum drain-source voltage of 80 V.
The on-resistance (Rds(on)) is 9.5 mΩ.
The typical gate charge at Vgs is 3.6 nC.
The dimensions of the WDFN package are 3.15 mm by 3.15 mm with a height of 750 μm.
It operates within a temperature range of -55°C to 175°C.
The maximum power dissipation is 107 W.
The maximum gate-source voltage tolerance is 20 V.
This MOSFET is suitable for applications such as motor control, battery management, and synchronous rectification.
It uses an enhancement mode channel type.
The forward voltage is 1.2 V.
It is manufactured in Malaysia.
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