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Nexperia N-Channel MOSFET 100 A 30 V Enhancement 4-Pin SOT-669 Surface Mount PSMN1R7-30YL,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN1R7-30YL,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 109W |
| Typical Gate Charge Qg @ Vgs | 77.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Supports a maximum continuous drain current of 100 amperes.
- Operates at a maximum drain-source voltage of 30 volts.
- Employs enhancement channel mode for efficient switching.
- Features a low maximum drain-source resistance of 2.4 milliohms.
- Typical gate charge rated at 77.9 nanocoulombs at Vgs.
- Power dissipation capability of up to 109 watts.
- Mount type is surface mount with a compact 4-pin SOT-669 package.
- Operating temperature range from -55°C minimum to 175°C maximum.
Product Description
Nexperia PSMN1R7-30YL,115 is a high-performance N-Channel MOSFET designed for power switching applications requiring up to 100 A continuous current and 30 V drain-source voltage. Packaged in a compact 4-pin SOT-669 surface mount package, this enhancement mode MOSFET offers efficient conduction with a low on-resistance of 2.4 milliohms, ensuring minimal power loss during operation.
The device features a typical gate charge of 77.9 nC at gate-source voltage, enabling fast switching suitable for industrial, automotive, and consumer electronics applications. It supports a robust maximum power dissipation rating of 109 watts, allowing it to handle demanding thermal loads reliably. The MOSFET's operating temperature range from -55°C to 175°C affords usage in harsh environments while maintaining performance integrity.
Designed for surface mount technology, the small form factor with dimensions of 5 mm length, 4.1 mm width, and 1.1 mm height aids in compact PCB layouts and high-density designs. The maximum gate-source voltage rating of -20 to +20 volts protects against overstress during switching transients.
Maximum continuous drain current of 100 A ensures capability for high power loads. Low maximum drain-source resistance contributes to energy efficiency and heat reduction. Enhanced switching performance due to optimized gate charge specifications.
Surface mount SOT-669 package supports modern manufacturing processes. Wide operating temperature range for industrial and automotive suitability. High power dissipation improves reliability in rigorous applications. Compact dimensions facilitate space-saving PCB designs.
Robust gate voltage tolerance extends device lifespan.
This MOSFET is ideal for use in power management, motor control, DC-DC converters, and other industrial, automotive, and electronics sectors, providing reliable transistor switching in demanding conditions.
Explore the Electronics & Electricals section for more high-quality MOSFETs and semiconductor components to meet your industrial and manufacturing needs.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current is 100 amperes.
It operates at a maximum drain-source voltage of 30 volts.
The maximum drain-source resistance is 2.4 milliohms.
The typical gate charge is rated at 77.9 nanocoulombs at gate-source voltage.
It has a power dissipation capability of up to 109 watts.
The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
The operating temperature range is from -55°C to 175°C.
It is designed for surface mount technology.
The maximum gate-source voltage rating is -20 to +20 volts.
It is suitable for power management, motor control, and DC-DC converters among other applications.
This model features an N-channel type.
The country of origin is the Philippines.
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