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Vishay EF N-Channel Power MOSFET 26 A 650 V Depletion Mode Surface Mount 4-Pin PowerPAK 8x8 SiHH105N60EF-T1GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Model SiHH105N60EF-T1GE3
Mount Type Surface
Series EF
Maximum Operating Temperature +150°C
Package Type PowerPAK 8 x 8
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 26A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 0.091Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 174W
Typical Gate Charge Qg @ Vgs 33nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • Supports robust high-voltage switching in industrial and automotive applications.
  • Low on-state resistance of 0.091 Ohms reduces conduction losses effectively.
  • Maximum power dissipation rating of 174 W enables sustained thermal performance.
  • Typical gate charge of 33 nC facilitates predictable gate drive requirements.
  • Capable of operating from -55°C up to +150°C for wide temperature range usage.
  • Complies with RoHS directives and meets automotive AEC-Q101 standard.
  • Designed for dense PCB layouts with PowerPAK 8 x 8 surface mount package.
  • Maximum gate-source voltage rating of 30 V supports common gate driver circuits.

Product Description

Vishay SiHH105N60EF-T1GE3 is a high-voltage N-Channel Power MOSFET tailored for industrial and automotive use. It operates in depletion mode with a maximum drain-source voltage of 650 V and supports continuous drain currents up to 26 A. Packaged in a compact 4-pin PowerPAK 8 x 8 surface mount format, it offers excellent thermal coupling and supports dense PCB layouts.

This MOSFET features a low Rds(on) of 0.091 Ohms, which reduces conduction losses and improves efficiency in power switching applications. Its maximum power dissipation rating of 174 W ensures robust performance under sustained thermal load. The device operates over a wide temperature range from -55°C to +150°C, making it suitable for harsh environments and automotive conditions.

Typical gate charge is 33 nC at Vgs, enabling predictable gate drive design, while the maximum gate-source voltage of 30 V protects against excessive drive voltages. The device complies with RoHS environmental standards and meets the stringent automotive AEC-Q101 qualification, making it highly reliable for vehicle-grade electronics.

Common applications include use in high-voltage DC-DC converters in industrial power supplies, automotive power modules, primary-side switching in switching-mode power supplies (SMPS), inverters, and motor drive half-bridge stages in electrified systems. Its surface-mount PowerPAK 8 x 8 package facilitates dense PCB assembly and efficient thermal management.

Supports robust high-voltage switching in industrial and automotive environments. Low conduction losses from 0.091 Ohm on-state resistance. 174 W maximum power dissipation for sustained performance. Wide operating temperature from -55°C to +150°C.

Compliant with RoHS and AEC-Q101 automotive standards. Typical gate charge of 33 nC enables predictable driver design. PowerPAK 8 x 8 surface mount package for compact PCB layouts. Maximum gate-source voltage of 30 V for gate-drive protection.

This product is ideal for demanding industrial, automotive, and manufacturing power electronics applications. Explore Vishay products and other Power MOSFETs on EnvMart for reliable semiconductor components.

Vishay EF N-Channel Power MOSFET 26 A 650 V Depletion Mode Surface Mount 4-Pin PowerPAK 8x8 SiHH105N60EF-T1GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 26 A.

This MOSFET has a maximum drain-source voltage rating of 650 V.

The on-state resistance (Rds(on)) is 0.091 Ohms, which helps reduce conduction losses.

The maximum power dissipation rating for this unit is 174 W, allowing for sustained thermal performance.

The typical gate charge is 33 nC at Vgs, which facilitates predictable gate drive requirements.

It can operate within a temperature range of -55°C to +150°C.

This model is packaged in a PowerPAK 8 x 8 surface mount format.

It meets the AEC-Q101 automotive standard, ensuring reliability for vehicle-grade applications.

The maximum gate-source voltage rating is 30 V, which protects against excessive drive voltages.

It is suitable for high-voltage DC-DC converters, automotive power modules, and switching-mode power supplies.

This MOSFET has a pin count of 4.

Yes, it complies with RoHS directives, ensuring it meets environmental regulations.

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