onsemi P-Channel MOSFET 3-Pin SOT-23, 1 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode NVR1P02T1G

onsemi NVR1P02T1G is a P-Channel power MOSFET designed for electronic and semiconductor applications requiring controlled switching with low power loss. Featuring a maximum continuous drain current of 1 ampere and a drain source voltage rating of 20 volts, this device is intended for surface-mount applications in compact 3-pin SOT-23 packaging.

Its low maximum drain source resistance of 180 milliohms minimizes conduction losses, enhancing efficiency in circuits. The device supports a maximum power dissipation of 400 milliwatts, making it suitable for moderate power applications where heat dissipation must be managed.

Operating reliably across a broad temperature range from -55°C to 150°C, the NVR1P02T1G meets the stringent AEC-Q101 automotive standard, certifying its robustness for automotive designs and other demanding environments.

The typical gate charge of 2.5 nC facilitates rapid switching, beneficial in power management and signal control. Voltage tolerances include a maximum gate-source voltage of -20 to +20 volts, providing design flexibility.

Physically, this MOSFET measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, supporting dense PCB layouts. The surface mount SOT-23 package type and 3-pin configuration allow straightforward integration in semiconductor circuits.

This MOSFET offers reliable performance in automotive, industrial, and commercial electronics applications where power efficiency and size are critical. Its robust construction and certified standards make it ideal for use in power regulation, switching circuits, and power management modules.

The onsemi NVR1P02T1G is a high-efficiency semiconductor component designed to provide dependable operation in diverse electronic systems. Explore related Power MOSFETs and discrete semiconductor components in the Electronics & Electricals category at EnvMart.