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STMicroelectronics MDmesh M2 N-Channel MOSFET 11A 650V Enhancement 3-Pin TO-263 STB13N60M2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB13N60M2 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 11 amperes for robust current handling.
- Rated for a maximum drain-source voltage of 650 volts suitable for high-voltage circuits.
- Enhancement mode channel ensures efficient switching characteristics.
- Compact TO-263 surface mount package with 3 pins for easy PCB integration.
- Low typical gate charge of 17 nanocoulombs optimized for fast switching.
- Maximum power dissipation of 110 watts enabling high power applications.
- Wide operating temperature range from -55°C to 150°C for reliable industrial use.
- Typical forward voltage of 1.6 volts reducing power loss during conduction.
Product Description
STMicroelectronics STB13N60M2 is a high-voltage MDmesh™ M2 series N-Channel MOSFET with a maximum continuous drain current of 11 amperes and a maximum drain-source voltage rating of 650 volts. Packaged in a 3-pin TO-263 surface mount device, it offers enhancement mode operation suitable for efficient power switching.
This MOSFET's low gate charge of 17 nanocoulombs allows for faster switching speeds and reduced switching losses, making it ideal for resonant-type switching supplies such as LLC converters.
It can handle a maximum power dissipation of 110 watts, has a forward voltage of 1.6 volts, and is optimized for use within a broad temperature range from -55°C up to 150°C, ensuring reliability in harsh industrial and commercial environments.
The compact TO-263 package dimensions of 10.4 mm length, 9.35 mm width, and 4.6 mm height enable integration into high-density PCBs. This device does not have specific automotive standards or approvals but is suitable for a variety of electronic power management applications.
Maximum continuous drain current: 11A. Maximum drain-source voltage: 650V. Enhancement mode channel operation. Low typical gate charge: 17nC. Power dissipation rated at 110W. Operating temperature from -55°C to 150°C. Compact 3-pin TO-263 surface mount packaging.
Forward voltage: 1.6V.
This MOSFET is well-suited for industrial power electronics, laboratory power supplies, embedded systems requiring efficient switching transistors, and other electronic power conversion equipment. It provides reliable performance in high voltage and current applications such as DC/DC converters, power supplies, and motor drives.
Explore the Electronics & Electricals catalog for a wide range of MOSFETs and discrete semiconductor components for your industrial and manufacturing needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the STB13N60M2 is 11 amperes.
This model has a maximum drain-source voltage rating of 650 volts, making it suitable for high-voltage circuits.
The typical gate charge for the STB13N60M2 is 17 nanocoulombs, which helps optimize fast switching characteristics.
It has a maximum power dissipation rating of 110 watts, enabling its use in high power applications.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The operating temperature range for the STB13N60M2 is from -55°C to 150°C, ensuring reliability in various environments.
The typical forward voltage of this MOSFET is 1.6 volts, which helps reduce power loss during conduction.
This model features an enhancement mode N-channel, which is suitable for efficient power switching.
The maximum gate-source voltage for the STB13N60M2 is -25V to +25V.
It is suitable for various electronic power management applications, including DC/DC converters and motor drives.
The TO-263 package of this MOSFET has 3 pins.
The maximum drain-source resistance (Rds) is rated at 380 milliohms.
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