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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NTF6P02 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NTF6P02 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.3W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
onsemi's NTF6P02 is a high-quality P-Channel Power MOSFET designed for efficient switching and amplification in various electronic circuits. This enhancement mode MOSFET is housed in a compact 4-pin SOT-223 surface mount package, suitable for space-saving PCB designs and automated assembly.
With a maximum continuous drain current of 8.4 A and a drain-source voltage rating of 20 V, it is ideal for low voltage power management and switching applications in industrial, automotive, and electronic device manufacturing sectors.
The device features a maximum drain-source resistance of 70 milliohms which ensures minimal conduction losses, thereby improving overall system efficiency. It can dissipate up to 8.3 watts of power safely, backed by a temperature range from -55°C to 150°C, making it robust for use in demanding operating conditions including automotive environments due to its AEC standard compliance.
The typical gate charge of 15 nC at the rated gate voltage supports fast switching speeds critical for PWM control and high-frequency applications. The forward voltage drop is approximately -1.2 V, contributing to reduced power loss during conduction.
Compact 4-pin SOT-223 package for surface mounting. High continuous drain current capability of 8.4 A. Drain-source voltage of 20 V suitable for low voltage circuits. Low Rds(on) of 70 milliohms for efficient power usage.
Power dissipation up to 8.3 W for thermal stability. Wide operating temperature range from -55°C to 150°C. Compliance with AEC automotive standard ensuring reliability. Fast switching performance with a gate charge of 15 nC.
Forward voltage drop of -1.2 V minimizing energy loss.
This P-Channel MOSFET is widely applied in power management circuits, automotive electronics, and industrial power supplies. Engineers and designers leverage its characteristics for enhancing energy efficiency and reliability in compact electronic assemblies.
Explore the broad selection of semiconductor products in the Power MOSFET category at EnvMart for advanced electronics engineering solutions.
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