DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMG6602SVT-7

DiodesZetex DMG6602SVT-7 is an isolated dual N-channel and P-channel power MOSFET that delivers robust performance for electronic and industrial power management applications. Packaged in a compact 6-pin TSOT surface mount format, this device features an enhancement mode channel and supports continuous drain currents up to 3.4 A with a maximum drain-source voltage rating of 30 V, making it highly suitable for switching and amplification tasks in low voltage systems.

This MOSFET offers an excellent combination of low resistance (140mΩ max) and forward voltage (0.8 V), resulting in improved efficiency and reduced thermal dissipation. The device exhibits a very low gate charge of 4nC at typical gate voltages, ensuring rapid switching speeds and minimal gate drive losses. With a power dissipation capacity of 1.27 W and an operating temperature range from -55°C to +150°C, it is designed to perform reliably in demanding environments including automotive and industrial sectors.

The product complies with several important standards, including J-STD-020 for handling, RoHS for environmental safety, MIL-STD-202 for reliability testing, UL 94V-0 flame retardant certification, and AEC-Q101 automotive qualification, emphasizing its suitability for high-quality production and safety-critical applications.

Physical dimensions of the MOSFET are 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height, optimized for dense PCB layouts. It integrates two elements per chip with isolated channel configurations, providing flexibility in circuit design.

This Power MOSFET is ideally applied in electronic components assemblies, power regulation modules, discrete semiconductor systems, and automotive circuits requiring efficient, high-speed switching performance with durability. Its surface mount design facilitates automation in manufacturing, making it a reliable choice for high-volume production environments in industry, automotive electronics, and consumer devices.

Isolated dual N and P-channel MOSFET for versatile power switching applications. Compact 6-pin TSOT surface mount package designed for PCB density and automation. Low drain-source resistance and forward voltage enable efficient operation.

Wide operating temperature and industrial/automotive qualifications ensure reliability. Low gate charge supports fast switching with minimal power loss. Compliance with environmental and safety standards including RoHS and UL 94V-0.

Explore more advanced power semiconductor components and MOSFETs at EnvMart to meet your specific power control needs across industrial, automotive, and electronics assembly sectors.