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onsemi Dual 2 N-Channel Power MOSFET 27 A 40 V Enhancement 8-Pin DFN NVMFD5C478NT1G
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | NVMFD5C478NT1G |
| Width | 6.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 23W |
| Typical Gate Charge Qg @ Vgs | 6.3nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.84V |
| Transistor Configuration | Dual |
Key Features
- The device features low on resistance for minimal conduction losses.
- Robust load performance ensures reliable operation in automotive applications.
- The dual transistor configuration enables efficient power management designs.
- Supports a maximum power dissipation of 23 W with high thermal efficiency.
- Wide operating temperature range from -55°C to +175°C suits harsh environments.
- Incorporates Automotive Standard AEC-Q101 qualification for automotive reliability.
- The DFN package provides a small 5.1 mm by 6.1 mm footprint with a height of 1.05 mm.
- Enhancement mode with 8-pin surface mount configuration enables easy PCB integration.
Product Description
The onsemi NVMFD5C478NT1G is a dual 2 N-channel power MOSFET designed for compact, efficient power switching in automotive and industrial applications. It supports a maximum continuous drain current of 27 A and a maximum drain-source voltage of 40 V, making it suitable for high current load switching and power management.
Encapsulated in a space-saving 8-pin DFN package sized 5.1 mm by 6.1 mm with a height of only 1.05 mm, this MOSFET offers high thermal performance and low conduction losses. The device features an enhancement mode channel with a maximum drain-source resistance of 17 milliohms, enabling efficient operation in power circuits.
It operates reliably over a broad temperature range from -55°C to +175°C, complying with the AEC-Q101 automotive standard to ensure durability in harsh environments such as automotive engine controllers and antilock braking systems.
Additional characteristics include a maximum power dissipation rating of 23 W and a typical gate charge of 6.3 nC at the specified gate-source voltage, facilitating fast switching with low gate drive losses.
This MOSFET is ideal for solenoid driver circuits and low-side/high-side driver configurations used in automotive and industrial power control systems. The product further supports advanced manufacturing inspection with a wettable flank option that enhances optical inspection accuracy during PCB assembly.
Low on resistance reduces conduction losses and improves efficiency. Robust load capability supports demanding power applications. Dual transistor configuration integrates two N-channel MOSFETs in one package. Wide operating temperature range supports automotive and industrial environments.
Compact DFN surface mount package minimizes PCB footprint and height. Automotive standard AEC-Q101 approval ensures quality and reliability. High current and voltage ratings suit a variety of power switching applications.
Designed for solenoid and driver circuits in automotive control systems. Wettable flank option enhances visual inspection during manufacturing processes. High thermal performance supports sustained high-power dissipation.
Explore EnvMart's extensive range of semiconductor components and Power MOSFET devices for optimized system design and reliable operation in automotive, industrial, and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 27 A.
This MOSFET supports a maximum drain-source voltage of 40 V.
The DFN package has dimensions of 5.1 mm in length, 6.1 mm in width, and a height of 1.05 mm.
It has a maximum power dissipation rating of 23 W.
The operating temperature range is from -55°C to +175°C.
The typical gate charge at the specified gate-source voltage is 6.3 nC.
This model complies with the Automotive Standard AEC-Q101.
The channel type of this MOSFET is N-channel.
There are 2 elements per chip in this device.
The maximum drain-source resistance is 17 milliohms.
This model uses surface mounting.
It is designed for solenoid driver circuits and low-side/high-side driver configurations in automotive and industrial power control systems.
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