Vishay N-Channel Power MOSFET 17 A, 60 V Enhancement Mode, 3-Pin TO-220AB IRFZ24PBF

Vishay IRFZ24PBF N-Channel Power MOSFET is engineered for reliable and efficient switching in power electronics. This device supports a maximum continuous drain current of 17 A and withstands drain-source voltage of up to 60 V with an enhancement mode channel design.

The MOSFET features a low on-resistance of 0.1 ohm, allowing for minimal conduction losses, which is critical in power management and conversion circuits. It dissipates up to 60 W of power and operates efficiently within an industrial temperature range from -55°C to 175°C, assuring durability under harsh conditions.

Packaged in a 3-pin TO-220AB form factor with through-hole mounting, it offers easy installation on PCBs and heat dissipation through its metallic tab. The compact size - 15.49 mm in height, 10.41 mm in length, and 4.65 mm in width - facilitates integration in space-constrained designs.

The typical gate charge of 25 nC at 25 V gate voltage allows for fast switching speeds suitable for PWM and inverter applications. The gate-source voltage tolerance from -20 V to +20 V supports a wide range of drive voltages safely. The forward voltage of 1.5 V contributes to power efficiency during conduction phases.

This product is RoHS-compliant, confirming adherence to environmental directives by restricting hazardous substances, making it suitable for sustainable and green applications.

Typical use cases include industrial power control, electronic component systems, power converters, and other semiconductor-based power management solutions and applications in fields such as consumer electronics, automotive electronics, and manufacturing automation.

Choose Vishay IRFZ24PBF MOSFET for dependable, efficient power switching in your electronic and industrial designs. Explore more power semiconductor products and components with EnvMart to suit your specific application needs.

This MOSFET features a low maximum drain-source resistance of 0.1 ohm for efficient conduction. Its maximum power dissipation is 60 W, suitable for medium power applications. The device operates reliably within a temperature range from -55°C to 175°C.

It has a typical gate charge of 25 nC at gate-source voltage of 25 V, ensuring fast switching. Mount type is through-hole with a compact dimension of 15.49 mm height and 10.41 mm length. Compliant with RoHS 2002/95/EC standards for environmental safety.

Forward voltage drop is rated at 1.5 V, optimizing power efficiency. Maximum gate-source voltage swings from -20 V to +20 V, providing flexibility in drive voltages. Designed for industrial, electronic component, power management, and semiconductor applications.