Infineon HEXFET N-Channel MOSFET 2.6A 150V Enhancement 4-Pin SOT-223 IRFL4315TRPBF

Infineon IRFL4315TRPBF HEXFET N-Channel MOSFET is a highly reliable discrete semiconductor designed for efficient power switching and management in electronic circuitry. Featuring a 4-pin SOT-223 surface mount package, this MOSFET supports a maximum continuous drain current of 2.6 amperes and withstands drain-source voltages up to 150 volts, making it suitable for medium power applications.

The device exhibits a low drain-source on-resistance of 185 milliohms, which reduces conduction losses and optimizes overall efficiency. Its operating temperature range from -55 to +150 degrees Celsius ensures dependable functionality in harsh industrial and automotive conditions.

A typical gate charge of 12 nanocoulombs at 12 volts gate-source voltage allows for low switching losses, and the gate-source voltage limits range from -30 to +30 volts ensuring robust operation. The forward voltage drop of approximately 1.5 volts supports effective current flow control.

This MOSFET is optimized for use in high-frequency DC-DC converters, switching power supplies, and power management systems requiring efficient and reliable semiconductor switching devices. The surface mount design is ideal for compact printed circuit boards in industrial, automation, and consumer electronic applications.

Maximum continuous drain current: 2.6A. Drain-source voltage rating: 150V. Low on-resistance: 185mΩ. Gate charge: 12nC at Vgs = 12V. Wide operating temperature range: -55°C to +150°C. 4-Pin SOT-223 package for surface mounting.

Enhancement mode channel. Forward voltage: 1.5V. Gate-source voltage range: -30V to +30V.

Infineon MOSFET devices are well-suited for a broad range of industrial, commercial, and technological applications requiring precise power control and efficient switching performance. Explore the entire Infineon semiconductor product range on EnvMart for additional electronics components and discrete semiconductors.