DiodesZetex N-Channel MOSFET, Enhancement Mode, 150 mA, 60 V, SOT-23 Package BS170FTA

DiodesZetex BS170FTA is an N-Channel Enhancement Mode MOSFET transistor designed to handle a maximum continuous drain current of 150 mA at a drain-source voltage of 60 V, housed in a compact SOT-23 3-pin surface mount package. It offers reliable performance in semiconductor applications requiring efficient switching and low power dissipation.

This device supports a maximum power dissipation of 330 mW and operates reliably across a temperature range from -55°C to 150°C, making it suitable for automotive and industrial electronics environments. The low maximum drain-source resistance of 5 ohms enables minimized power loss and enhanced efficiency in electronic circuits.

Measuring just 3.05 mm in length, 1.4 mm in width, and 1 mm in height, the BS170FTA MOSFET is ideal for compact PCB layouts where footprint constraints are critical. Its compliance with automotive standard AEC-Q101 assures quality and reliability for automotive electronic systems.

The device is primarily used in electronic switching, signal amplification, and power management in a range of applications including industrial automation, automotive electronics, power supplies, and embedded systems. The SOT-23 package facilitates easy surface mounting and integration into various circuit designs.

Maximum continuous drain current of 150 mA. Drain-source voltage rating of 60 V. SOT-23 surface mount package. Enhancement mode channel operation. Maximum power dissipation of 330 mW. Operating temperature from -55°C to 150°C.

Low maximum drain-source resistance of 5 Ω. Meets automotive standard AEC-Q101. Compact dimensions for space-saving PCB design. Reliable semiconductor transistor for industrial and automotive use. Explore more semiconductor components from DiodesZetex and enhance your electronic designs with robust MOSFETs optimized for efficiency and reliability at EnvMart.