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Microchip N-Channel MOSFET 140A 12V TO-247 MSC025SMA120B
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC025SMA120B |
| Mount Type | Through Hole |
| Series | MSC025SMA120B |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 232nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Key Features
- Type N-Channel silicon carbide MOSFET for advanced power switching.
- Maximum continuous drain current of 140A ensures robust performance.
- Maximum drain-source voltage rated at 12V offers stable operation in low voltage systems.
- Through-hole TO-247 package allows secure and efficient mounting.
- Low gate charge enables fast switching speeds.
- Stable operation at high junction temperature up to 175°C.
- RoHS compliant and suitable for industrial electronic designs.
Product Description
Microchip MSC025SMA120B N-Channel MOSFET is designed to advance the performance of high voltage applications by leveraging silicon carbide technology. The MOSFET delivers robust power handling, fast switching, and reliable operation for industrial, commercial, and laboratory systems requiring a high-performance discrete semiconductor component.
With a maximum continuous drain current of 140A and a drain-source voltage of 12V, the MSC025SMA120B reliably operates under demanding loads, making it suitable for power switching, motor control, inverter systems, and energy management solutions. The TO-247 package supports efficient through-hole mounting for secure integration in power circuits.
Type N-Channel silicon carbide MOSFET for advanced power switching. Maximum continuous drain current of 140A ensures robust performance. Maximum drain-source voltage rated at 12V offers stable operation in low voltage systems.
Through-hole TO-247 package allows secure and efficient mounting. Low gate charge enables fast switching speeds. Stable operation at high junction temperature up to 175°C. RoHS compliant and suitable for industrial electronic designs.
Exceptionally low capacitances and gate charge enhance its ability to switch rapidly while reducing power losses. The device maintains operation at elevated junction temperatures, up to 175°C, supporting reliable performance in challenging environments, including manufacturing and power equipment.
The MSC025SMA120B is RoHS compliant, confirming its suitability for projects that require regulatory adherence, and is not classified under automotive standards. It is ideal for electronics engineers designing semiconductors for renewable energy, industrial automation, and smart power solutions.
Explore more MOSFET and semiconductor solutions from Microchip in the EnvMart Electronics & Electricals > Semiconductor > MOSFET category for additional component options tailored to your design requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 140A, ensuring robust performance in demanding applications.
The maximum drain-source voltage rated for this MOSFET is 12V, suitable for low voltage systems.
This model comes in a TO-247 package type, which allows for secure and efficient through-hole mounting.
The MSC025SMA120B operates within a temperature range of -55°C to 175°C, supporting stable performance in various environments.
The typical gate charge for this model is 232nC at a gate-source voltage of 2V, allowing for fast switching speeds.
The MSC025SMA120B is RoHS compliant, confirming its suitability for projects that require adherence to regulatory standards.
The maximum power dissipation for the MSC025SMA120B is 1.6W, which is important for managing thermal performance in circuits.
The maximum gate-source voltage for this MOSFET is 2V, which is critical for its operation.
The forward voltage for this model is 1.8V, relevant for its operation in power circuits.
This model is an N-Channel silicon carbide MOSFET, designed for advanced power switching applications.
The maximum drain-source resistance (Rds) for the MSC025SMA120B is 8Ω, which affects its efficiency in power applications.
This MOSFET is suitable for applications such as power switching, motor control, inverter systems, and energy management solutions.
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