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Microchip N-Channel Enhancement Mode MOSFET 230mA 60V TO-92 3-Pin 2N7008-G

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 5.33mm
Length 5.08mm
Model 2N7008-G
Width 4.06mm
Mount Type Through Hole
Series 2N7008
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 230mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 7.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.5V

Key Features

  • The device uses a vertical DMOS structure providing reliable performance.
  • It operates at a maximum power dissipation of 1W ensuring stable operation.
  • Features low power drive requirements ideal for efficient switching.
  • Built-in integral source-drain diode enhances switching efficiency.
  • Designed to operate in a temperature range from -55°C to 150°C for diverse applications.
  • It offers excellent thermal stability and is free from secondary breakdown.
  • Its through-hole mount TO-92 package supports straightforward PCB assembly.
  • Pin count of three supports simple integration in circuits.

Product Description

Microchip 2N7008-G is an N-Channel enhancement-mode MOSFET transistor in a compact TO-92 package with 3 pins. It is rated for a maximum continuous drain current of 230mA and a maximum drain-source voltage of 60V, featuring a vertical DMOS structure that combines efficient power handling with high input impedance.

This transistor operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for various electronic and industrial applications including power management, amplification, and switching circuits. Its maximum power dissipation of 1 watt ensures it performs stably under moderate load conditions.

The device features low power drive requirements, facilitating energy-efficient designs, and an integral source-drain diode which aids in fast switching and improved performance. The channel mode is enhancement type, providing normally off operation which is ideal for switching use cases.

Its compact dimensions of approximately 5.33mm height, 5.08mm length, and 4.06mm width combined with through-hole mount style enhance ease of installation on printed circuit boards. The 3-pin configuration is standard for many MOSFETs, offering compatibility with common circuit layouts.

Microchip 2N7008-G ensures excellent thermal stability and is designed to be free from secondary breakdown, enhancing device longevity and reliability in harsh electrical environments. This makes it a preferred choice for industrial, automotive, HVAC, and electronic manufacturing sectors where efficient and robust switching components are essential.

The device uses a vertical DMOS structure providing reliable performance. It operates at a maximum power dissipation of 1W ensuring stable operation. Features low power drive requirements ideal for efficient switching. Built-in integral source-drain diode enhances switching efficiency.

Designed to operate in a temperature range from -55°C to 150°C for diverse applications. It offers excellent thermal stability and is free from secondary breakdown. Its through-hole mount TO-92 package supports straightforward PCB assembly.

Pin count of three supports simple integration in circuits. Maximum gate-source voltage ranges from -30V to +30V for flexible control. This MOSFET is suited for electronic, power, and discrete semiconductor usage in industrial and electronic designs.

This transistor comes in a pack of 25 units ready for insertion into machinery or circuit boards, enabling improved production efficiency. Suitable for use in electronics manufacturing, design, prototyping, and repair applications.

Explore more from Microchip and other semiconductor products at EnvMart for reliable sourcing of electronic components.

Microchip N-Channel Enhancement Mode MOSFET 230mA 60V TO-92 3-Pin 2N7008-G
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Frequently Asked Questions

The maximum continuous drain current for the 2N7008-G MOSFET is 230mA.

The maximum drain-source voltage rating of the 2N7008-G is 60V.

The 2N7008-G MOSFET has a maximum power dissipation capability of 1W.

This model operates within a temperature range of -55°C to 150°C.

The 2N7008-G comes in a TO-92 package type, which is a through-hole mount style.

The 2N7008-G MOSFET has a pin count of three.

The channel mode of this MOSFET is enhancement type, which means it operates normally off.

The maximum gate-source voltage for the 2N7008-G ranges from -30V to +30V.

The dimensions of the 2N7008-G are approximately 5.33mm in height, 5.08mm in length, and 4.06mm in width.

The 2N7008-G is suitable for various applications including power management, amplification, and switching circuits.

The forward voltage for the 2N7008-G is 1.5V.

The 2N7008-G is manufactured in India.

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