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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | 2N7008-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Series | 2N7008 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 230mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Microchip 2N7008-G is an N-Channel enhancement-mode MOSFET transistor in a compact TO-92 package with 3 pins. It is rated for a maximum continuous drain current of 230mA and a maximum drain-source voltage of 60V, featuring a vertical DMOS structure that combines efficient power handling with high input impedance.
This transistor operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for various electronic and industrial applications including power management, amplification, and switching circuits. Its maximum power dissipation of 1 watt ensures it performs stably under moderate load conditions.
The device features low power drive requirements, facilitating energy-efficient designs, and an integral source-drain diode which aids in fast switching and improved performance. The channel mode is enhancement type, providing normally off operation which is ideal for switching use cases.
Its compact dimensions of approximately 5.33mm height, 5.08mm length, and 4.06mm width combined with through-hole mount style enhance ease of installation on printed circuit boards. The 3-pin configuration is standard for many MOSFETs, offering compatibility with common circuit layouts.
Microchip 2N7008-G ensures excellent thermal stability and is designed to be free from secondary breakdown, enhancing device longevity and reliability in harsh electrical environments. This makes it a preferred choice for industrial, automotive, HVAC, and electronic manufacturing sectors where efficient and robust switching components are essential.
The device uses a vertical DMOS structure providing reliable performance. It operates at a maximum power dissipation of 1W ensuring stable operation. Features low power drive requirements ideal for efficient switching. Built-in integral source-drain diode enhances switching efficiency.
Designed to operate in a temperature range from -55°C to 150°C for diverse applications. It offers excellent thermal stability and is free from secondary breakdown. Its through-hole mount TO-92 package supports straightforward PCB assembly.
Pin count of three supports simple integration in circuits. Maximum gate-source voltage ranges from -30V to +30V for flexible control. This MOSFET is suited for electronic, power, and discrete semiconductor usage in industrial and electronic designs.
This transistor comes in a pack of 25 units ready for insertion into machinery or circuit boards, enabling improved production efficiency. Suitable for use in electronics manufacturing, design, prototyping, and repair applications.
Explore more from Microchip and other semiconductor products at EnvMart for reliable sourcing of electronic components.
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