Infineon CoolMOS P7 N-Channel MOSFET, 44 A Continuous Drain Current, 600 V Maximum Drain Source Voltage IPT60R050G7XTMA1

Infineon IPT60R050G7XTMA1 CoolMOS P7 N-Channel MOSFET is a high-performance semiconductor device designed for demanding power electronics applications in industrial, automotive, and consumer electronics sectors. Featuring a maximum continuous drain current of 44 A and a maximum drain-source voltage of 600 V, this device ensures efficient power switching and high throughput in compact surface mount designs.

The CoolMOS P7 series technology incorporated in this MOSFET provides best-in-class figures of merit such as low R DS(on)xE oss and R DS(on)xQ G, which translates to reduced switching losses and higher efficiency in power factor correction circuits up to 3kW, and resonant LLC converters used in power supplies and industrial drives.

This MOSFET operates in an enhancement mode channel with a typical gate charge of 68 nC at Vgs, facilitating ease of gate driving and improved switching speed. Packaged in an 8-pin HSOF surface mount device, it offers improved thermal properties through the TO-Leadless package, supporting a maximum power dissipation of 245 W and operating temperatures from -55°C up to 150°C.

The device has a maximum gate-source voltage rating of ±20 V, a forward voltage drop of 800 mV, and a low maximum drain-source resistance of 50 milliohms, attributes that contribute to its efficiency and reliability in high-frequency and hard switching applications.

Typical applications of the Infineon IPT60R050G7XTMA1 include industrial power management, power factor correction circuits, resonant and hard switching topologies, and high-end power supply manufacturing. Its specifications meet the needs of high current, high efficiency electronic circuits requiring compact automotive-grade and industrial-grade components.

The MOSFET is RoHS compliant and supplied in a package designed for optimized PCB layout and thermal dissipation, compatible with surface mounting production techniques. The device uses the CoolMOS P7 series technology which provides excellent R DS(on)xE oss and R DS(on)xQ G figure of merit.

Designed for hard switching topologies such as power factor correction up to 3kW and resonant circuits like high-end LLC converters. Features enhanced thermal performance with TO-Leadless package style suitable for SMT applications.

Supports a maximum power dissipation of 245 W and maximum operating temperature of 150°C. Standard 8-pin HSOF package with a typical gate charge of 68 nC and enhancement channel mode. Operating temperature range from -55°C to 150°C and maximum gate-source voltage rating of ±20 V.

Forward voltage drop of 800 mV and low drain-source resistance of 50 mΩ. Explore our Electronics & Electricals category for more advanced MOSFETs and semiconductor components from leading manufacturers like Infineon.