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Infineon HEXFET N-Channel Power MOSFET, 350 A Continuous Drain Current, 40 V Maximum Drain Source Voltage, 3-Pin IRFP4004PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4004PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 350A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 380W |
| Typical Gate Charge Qg @ Vgs | 220nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 350 A ensures high current handling capacity.
- Rated for a maximum drain-source voltage of 40 V suitable for low voltage power systems.
- Features a 3-pin TO-247 package for through-hole mounting and efficient heat dissipation.
- Low on-resistance of 2 mΩ reduces conduction losses in power circuits.
- Enhancement mode channel operation with a maximum power dissipation of 380 W.
- Typical gate charge of 220 nC optimizes switching performance and speed.
- Wide operating temperature range from -55°C to 175°C supports industrial environments.
- Maximum gate-source voltage is ±20 V, providing robust gate control.
Product Description
Infineon's IRFP4004PBF HEXFET N-Channel Power MOSFET is engineered to deliver high efficiency and reliability in power electronic applications. Designed for industrial and commercial uses, this MOSFET supports a continuous drain current of 350 A and a maximum drain-source voltage of 40 V, making it suitable for medium power DC/DC converters and motor control circuits.
Its TO-247 through-hole package allows easy mounting and effective thermal management, essential for sustained operation in demanding environments. The device features a low Rds(on) of 2 mΩ, significantly reducing conduction losses and improving overall system efficiency.
This MOSFET operates in enhancement mode with a gate charge of 220 nC, balancing switching speed and power loss. The maximum power dissipation rating of 380 W permits high-power operation with proper heat sinking.
With a broad operating temperature range from -55°C up to 175°C, the IRFP4004PBF is suited for automotive, industrial control, and power management applications. The gate-source voltage tolerance of ±20 V enables robust gate drive conditions, protecting the device during switching transients.
Maximum continuous drain current of 350 A. Maximum drain-source voltage rating of 40 V. Low on-resistance of 2 milliohms (2 mΩ). 3-pin TO-247 through-hole package. Maximum power dissipation capacity of 380 W. Typical gate charge of 220 nC at Vgs.
Wide temperature operation from -55°C to 175°C. Maximum gate-source voltage tolerance ±20 V. Compact dimensions suitable for efficient PCB layouts.
This MOSFET is ideal for industrial electronics, power management systems, motor drives, and renewable energy inverters requiring a high-current N-channel switch with low losses. It combines Infineon’s proprietary HEXFET technology ensuring reliability and performance in harsh environments.
Discover a wide range of Infineon semiconductor devices in the EnvMart electronics components category, engineered for high-performance industrial applications.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 350 A.
This model has a maximum drain-source voltage rating of 40 V.
It features a 3-pin TO-247 package for through-hole mounting.
The low on-resistance value is 2 mΩ, which helps reduce conduction losses.
The maximum power dissipation capacity is rated at 380 W.
The typical gate charge is 220 nC at Vgs.
It operates within a wide temperature range from -55°C to 175°C.
The maximum gate-source voltage tolerance is ±20 V.
This model uses an N-channel enhancement mode channel.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
It is suitable for industrial electronics, power management systems, motor drives, and renewable energy inverters.
The forward voltage is rated at 1.3 V.
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