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Infineon IPT N-Channel MOSFET 400A 800V 8-Pin TO-263 IPT020N10N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPT020N10N5ATMA1 |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Provides a high continuous drain current of 400A for robust high-power capability.
- Supports a maximum drain source voltage of 800V, ideal for high-voltage switching.
- Low Rds(on) of 1.2mΩ for minimal conduction losses and efficient operation.
- Surface-mount TO-263 package ensures reliable PCB assembly.
- Automotive qualified to AEC-Q101 standard for enhanced reliability.
- RoHS compliant, suitable for restricted-substance projects.
- Maximum power dissipation of 81W supports thermal performance.
- Wide operating temperature range from -55°C to 175°C.
Product Description
Infineon IPT020N10N5ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and automotive applications. This device features a robust 400A continuous drain current and a maximum drain source voltage of 800V, making it suitable for high-current and high-voltage switching environments.
Provides excellent power handling with 81W maximum dissipation, enabling use in high-power conversion and traction inverter systems. Low Rds(on) of 1.2mΩ ensures reduced conduction losses, improving efficiency and thermal management.
Complies with the automotive AEC-Q101 standard, making it a reliable choice for vehicle power electronics. Wide operational temperature range from -55°C to 175°C allows use in extreme environmental conditions. Typical gate charge of 80nC supports rapid switching and fast gate-drive performance.
Forward voltage of 1V and gate rating of 20V permit broad design flexibility. Surface-mount TO-263 package provides sturdy and compact installation for modern PCB layouts. RoHS compliance ensures device suitability for restricted-substance projects.
Ideal applications include traction inverters, high-voltage motor drives, DC-DC converters for industrial power supplies, energy storage system switching, and on-board power electronics in automotive and industrial environments.
The device’s technical specification allows engineers to meet stringent current and voltage requirements while maintaining low conduction and switching losses. Its reliability, automotive qualification, and environmental compliance make it a staple in advanced power electronics designs.
Industries: Industrial automation, automotive, power conversion, energy storage, manufacturing, and laboratory controls. Explore more Infineon MOSFETs and advanced semiconductors in the EnvMart Semiconductor category.
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Frequently Asked Questions
The Infineon IPT020N10N5ATMA1 has a maximum continuous drain current of 400A, making it suitable for high-power applications.
This MOSFET supports a maximum drain source voltage of 800V, ideal for high-voltage switching environments.
The device features a low Rds(on) of 1.2mΩ, which helps minimize conduction losses and improve efficiency during operation.
It comes in a surface-mount TO-263 package, ensuring reliable PCB assembly and compact installation.
The operational temperature range for this model is from -55°C to 175°C, allowing it to function in extreme environmental conditions.
Yes, it is automotive qualified to the AEC-Q101 standard, enhancing its reliability for vehicle power electronics.
The maximum power dissipation for the Infineon IPT020N10N5ATMA1 is 81W, supporting effective thermal performance.
The typical gate charge is 80nC, which supports rapid switching and fast gate-drive performance.
The forward voltage rating is 1V, which allows for broad design flexibility in various applications.
This model is suitable for industries such as industrial automation, automotive, power conversion, energy storage, and manufacturing.
The maximum gate source voltage for this MOSFET is 20V, providing design flexibility for various applications.
Yes, this MOSFET is RoHS compliant, making it suitable for projects that restrict certain substances.
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