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Infineon N-Channel Power MOSFET 381A 40V TDSON OptiMOS 5 BSC096N10LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC096N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features advanced OptiMOS 5 technology for superior thermal performance and efficiency.
- Maximum continuous drain current of 381A suitable for industrial power circuits.
- 40V maximum drain-source voltage for robust operation.
- Low drain-source resistance of 0.7mΩ for minimized conduction losses.
- 8-pin TDSON surface-mount package ensures compact PCB integration.
- Supports high-frequency switching with a typical gate charge of 80nC.
- Power dissipation up to 81W offers reliable thermal handling.
- Wide operating temperature range from -55°C to 175°C.
Product Description
Infineon BSC096N10LS5ATMA1 N-Channel Power MOSFET is engineered for demanding industrial and electronic applications, offering high current handling and robust voltage operation. Its advanced OptiMOS 5 technology ensures superior performance in high-frequency switching environments, making it ideal for applications such as power supplies, battery management, inverter circuits, motor control, and other heavy-duty electronics.
Featuring a maximum continuous drain current of 381A and a drain-source voltage of 40V, this MOSFET delivers exceptional reliability and efficiency. The exceptionally low drain-source resistance of 0.7mΩ ensures minimal energy loss during operation, helping reduce heat generation and improve system efficiency.
The TDSON surface-mount package with 8 pins facilitates easy integration into compact PCBs, optimizing space and enabling efficient thermal dissipation. Compatibility with typical gate charge values around 80nC makes it well-suited for systems operating at high switching frequencies.
Advanced OptiMOS 5 design enhances thermal resistance and output performance. Optimized for chargers and high-frequency switching operations in industrial, automotive, and commercial electronics. Supports high-power dissipation (up to 81W) and wide operating temperature range (-55°C to 175°C).
Halogen-free and RoHS compliant construction.
Industrial users benefit from its reliability in power electronics for manufacturing automation, laboratory instrumentation, renewable energy control, and high-efficiency converters. The device is also suitable for HVAC, water treatment control systems, and commercial power distribution setups where high performance is critical.
For those seeking a durable, high-efficiency MOSFET for their electronic designs, the Infineon BSC096N10LS5ATMA1 module offers an excellent solution. Its compact TDSON package and surface-mount ready design improve production efficiency and support streamlined assembly processes.
Browse more N-Channel MOSFETs and industrial power semiconductors from Infineon in the Semiconductor category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon BSC096N10LS5ATMA1 is 381A.
This model has a maximum drain-source voltage of 40V.
The drain-source resistance of this MOSFET is 0.7mΩ, which minimizes conduction losses.
The typical gate charge for the Infineon BSC096N10LS5ATMA1 is around 80nC.
It can handle a maximum power dissipation of up to 81W.
The operating temperature range for this model is from -55°C to 175°C.
This MOSFET uses an 8-pin TDSON surface-mount package.
Yes, the Infineon BSC096N10LS5ATMA1 is RoHS compliant.
It is suitable for applications such as power supplies, battery management, inverter circuits, and motor control.
The channel type of this MOSFET is N-channel.
The maximum gate-source voltage for this model is 20V.
The Infineon BSC096N10LS5ATMA1 is manufactured in India.
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