onsemi N-Channel MOSFET SOT-23 Package, 1.3 A, 20 V, Enhancement Mode NDS331N

onsemi NDS331N is a high-performance N-Channel Enhancement Mode MOSFET designed for low voltage and low current switching applications. Featuring a compact SOT-23 3-pin surface mount package, it delivers a maximum continuous drain current of 1.3 A and a maximum drain-source voltage rating of 20 V. This device is manufactured using an advanced DMOS process to provide low on-resistance and high switching speed, ideal for efficient power management circuits.

Its robust design supports maximum power dissipation up to 500 mW and can operate safely over a wide temperature range from -55 °C to 150 °C. The typical gate charge of 3.5 nC at 3.5 V gate-source voltage enables fast switching capabilities, while a maximum gate-source voltage threshold of 8 V ensures device protection.

Dimensions of 2.92 mm length, 1.4 mm width, and 940 μm height allow for compact board layouts, making it suitable for use in electronic component assemblies requiring reliable N-Channel MOSFETs in power and signal switching roles.

This MOSFET is typically used in industrial electronic power control, consumer electronics power supplies, and signal switching applications requiring efficient and reliable transistor performance. While it is not qualified for specific automotive standards, it remains widely utilized across laboratory, manufacturing, and general electronics sectors.

This enhancement mode MOSFET features low on-resistance for efficient switching. The device supports a maximum power dissipation of 500 mW. It has a maximum drain-source resistance of 160 milliohms providing reliable conductivity.

Suitable for surface mount applications with a 3-pin SOT-23 package type. Operating temperature ranges from -55 °C up to 150 °C ensuring durability in various environments. Typical gate charge at 3.5 V gate voltage is low, enabling fast switching performance.

Maximum gate-source voltage rating is 8 V ensuring safe operation under high voltage drive signals. The compact dimensions (2.92 mm length, 1.4 mm width, 940 µm height) support high-density circuit designs. Designed without specific automotive standards, ideal for general electronic semiconductor applications.

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