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Infineon HEXFET N-Channel MOSFET 47A Continuous Drain Current 55V Drain-Source Voltage TO-220 Package IRLZ44NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRLZ44NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRLZ44N 47A 55VBrand | International Rectifier |
Key Features
- Supports maximum continuous drain current up to 47 amperes.
- Drain-source voltage rating of 55 volts suitable for varied electronic circuits.
- Low drain-source resistance of 22 milliohms for efficient conduction.
- Enhancement mode MOSFET with 3-pin TO-220 package for through-hole mounting.
- Maximum power dissipation of 110 watts for robust thermal handling.
- Operates reliably within temperature range of -55°C to +175°C.
- Typical gate charge of 48 nanocoulombs at 5 volts facilitates high-frequency switching.
- Gate-source voltage tolerance from -16V to +16V ensures operational safety.
Product Description
Infineon IRLZ44NPBF is a HEXFET type N-Channel MOSFET designed to deliver reliable, high-performance power switching and amplification in electronic systems. Featuring a maximum continuous drain current rating of 47 amperes and a drain-source voltage limit of 55 volts, this device is ideal for power supply circuits, automotive controls, motor drives, and other demanding applications requiring efficient load switching.
The device comes in a through-hole TO-220 package with 3 pins, easing integration and enhancing heat dissipation for industrial and commercial uses. Its low on-resistance of 22 milliohms minimizes conduction losses, which improves overall system efficiency. The enhancement mode operation with a low gate threshold voltage between 1V and 2V allows for easy driving with standard logic levels.
Operating temperatures range from -55°C to 175°C, ensuring robust performance in harsh environments. The gate charge value of 48 nanocoulombs at 5 volts supports high-frequency switching, making it suitable for DC-DC converters and switching power supplies. The gate can safely handle voltages from -16 to +16 volts, allowing for flexible circuit designs.
Common applications include power supply regulation, automotive circuits requiring reliable power handling, motor control systems, and lighting controls. Overall, the IRLZ44NPBF MOSFET offers a balanced combination of high current capacity, low resistance, and thermal robustness for industrial, laboratory, manufacturing, and automotive sectors.
Supports maximum continuous drain current up to 47 amperes. Drain-source voltage rating of 55 volts. Low drain-source resistance of 22 milliohms for efficiency. Enhancement mode MOSFET with TO-220 through-hole package. High power dissipation capability of 110 watts.
Wide operating temperature range: -55°C to +175°C. Low gate charge facilitates high-frequency switching. Gate-source voltage tolerance from -16V to +16V. Compact physical dimensions optimize PCB space.
This Infineon MOSFET is engineered to meet demanding electronic and power management requirements across multiple industries including industrial automation, automotive, manufacturing, and HVAC systems. Explore our full range of semiconductor devices and electronic components at EnvMart for reliable power and control solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 amperes.
The drain-source voltage rating is 55 volts, suitable for various electronic circuits.
It comes in a TO-220 package, designed for through-hole mounting.
The maximum power dissipation capability is 110 watts, allowing for robust thermal handling.
It operates reliably within a temperature range of -55°C to +175°C.
The typical gate charge at 5 volts is 48 nanocoulombs, which facilitates high-frequency switching.
The drain-source resistance is 22 milliohms, which contributes to efficient conduction.
The gate-source voltage tolerance ranges from -16V to +16V, ensuring operational safety.
This model features a 3-pin configuration, facilitating easy integration into circuits.
It operates in enhancement mode, allowing for easy driving with standard logic levels.
The forward voltage is 1.3 volts, which is relevant for its operation in circuits.
This model is manufactured in India.
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