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Nexperia Digital Transistor PNP -100 mA, -50 V, 3-Pin SOT-23 PDTA114ET,215

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PDTA114ET,215
Width 2.5mm
Mount Type Surface
Series PDTA114ET
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 180MHz
onsemi MMUN2111LT1G Transistor, -100 mA PNP, -50 V, 3-Pin SOT-23Brand onsemi

Key Features

  • This digital transistor features a maximum power dissipation of 250 mW.
  • It supports a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
  • The device has a minimum DC current gain (hFE) of 30 and a maximum transition frequency of 180 MHz.
  • Its compact dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, making it suitable for surface mounting.
  • The transistor is RoHS compliant and meets AEC-Q101 automotive standards.
  • This transistor is ideal for switching and amplification in digital circuits.

Product Description

Nexperia PDTA114ET,215 digital transistor is a high-quality PNP bipolar transistor designed for digital applications, with a maximum collector current of -100 mA and a collector-emitter voltage rating of -50 V. It comes in a compact 3-pin SOT-23 surface mount package, making it suitable for modern electronic circuit designs where space-saving is crucial.

With a maximum power dissipation of 250 mW, the transistor can operate reliably across a wide temperature range from -65°C to 150°C. The device offers a minimum DC current gain (hFE) of 30 and a maximum transition frequency of 180 MHz, providing efficient switching and amplification capabilities in digital circuits.

The PDTA114ET,215 transistor is RoHS compliant, ensuring environmental safety, and it meets the stringent AEC-Q101 automotive standard which guarantees reliability in automotive and industrial environments.

Its small footprint with dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height allows easy integration on densely populated printed circuit boards. This component is particularly suited for use in electronic component assemblies, power management modules, and semiconductor applications in consumer, industrial, and automotive electronics.

This transistor is designed for surface mount applications with a 3-pin configuration. It is ideal for switching and amplification tasks in digital electronic designs. The product is made in China and supplied as new condition.

The series PDTA114ET offers dual resistor Digital Transistor variants with integrated bias resistors for easy interfacing to digital logic circuits. Explore the extensive range of semiconductors and discrete components at EnvMart for reliable and professional-grade electronic components meeting industry standards.

Nexperia Digital Transistor PNP -100 mA, -50 V, 3-Pin SOT-23 PDTA114ET,215
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Frequently Asked Questions

The maximum collector current for the PDTA114ET,215 digital transistor is -100 mA.

This model operates within a temperature range of -65°C to 150°C.

The maximum power dissipation for this transistor is 250 mW.

The dimensions of the PDTA114ET,215 are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum transition frequency for this model is 180 MHz.

It comes in a 3-pin SOT-23 surface mount package.

The minimum DC current gain (hFE) for the PDTA114ET,215 is 30.

Yes, the PDTA114ET,215 is RoHS compliant, ensuring it meets environmental safety standards.

This transistor meets the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum collector-emitter voltage rating for the PDTA114ET,215 is -50 V.

The PDTA114ET,215 uses a single transistor configuration.

The PDTA114ET,215 is made in China.

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