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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSG0810NDIATMA1 |
| Mount Type | Surface Mount |
| Series | BSG0810NDI |
| Maximum Operating Temperature | 150°C |
| Package Type | TISON-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Power Dissipation Pd | 6.25W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1V |
Infineon BSG0810NDIATMA1 is a dual asymmetric N-channel Power MOSFET designed for industrial, electronic, and power management applications. It delivers a maximum continuous drain current of 50 A and a drain-source voltage threshold of 25 V, packaged in a compact 8-pin TISON-8 surface mount format. The device integrates a monolithic Schottky-like diode providing improved efficiency and reduced conduction losses.
This MOSFET supports industrial grade operating temperatures ranging from -55°C to 150°C, making it suitable for a wide range of harsh environments and demanding applications including power conversion, motor drives, and switching power supplies.
The device’s low typical gate charge of 8.4nC enables fast switching and reduced drive losses, while its power dissipation rating of 6.25 W ensures operation with adequate thermal management. The maximum gate-source voltage of 16 V provides added robustness for gate drive applications.
Manufactured with halogen-free materials, it complies fully with IEC61249-2-21 standards and meets RoHS and JEDEC requirements. The Pb-free plating supports environmentally responsible assembly processes. This Power MOSFET features two elements per chip supporting dual-channel operation for optimized performance in parallel and complementary switching topologies.
This MOSFET features an 8-pin TISON-8 surface mount package. Typical gate charge of 8.4 nC at gate-source voltage. Maximum power dissipation capacity of 6.25 W for reliable operation. Operating temperature range from -55°C to 150°C.
Integrated monolithic Schottky-like diode for enhanced performance. Halogen-free construction meeting IEC61249-2-21 standards. Lead plating is Pb-free and RoHS compliant. Designed with two elements per chip supporting dual channel functionality.
Maximum gate-source voltage rating of 16 V ensures robust switching. Forward voltage of 1 V typical enhances efficient conduction.
This MOSFET is ideal for use in power electronics, industrial control systems, automotive electronics, and power management modules. Its high current capability and efficient switching make it suitable for complex PCB assemblies and high-reliability applications.
Explore the Infineon range of MOSFETs available at EnvMart to equip your industrial and electronic projects with quality semiconductor components.
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