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Infineon Dual Asymmetric N-Channel Power MOSFET, 50 A Continuous Drain Current, 25 V Drain Source Voltage BSG0810NDIATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSG0810NDIATMA1
Mount Type Surface Mount
Series BSG0810NDI
Maximum Operating Temperature 150°C
Package Type TISON-8
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 50A
Maximum Drain Source Voltage Vds 25V
Maximum Power Dissipation Pd 6.25W
Typical Gate Charge Qg @ Vgs 8.4nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 1V

Key Features

  • This MOSFET features an 8-pin TISON-8 surface mount package.
  • Typical gate charge of 8.4 nC at gate-source voltage.
  • Maximum power dissipation capacity of 6.25 W for reliable operation.
  • Operating temperature range from -55°C to 150°C.
  • Integrated monolithic Schottky-like diode for enhanced performance.
  • Halogen-free construction meeting IEC61249-2-21 standards.
  • Lead plating is Pb-free and RoHS compliant.
  • Designed with two elements per chip supporting dual channel functionality.

Product Description

Infineon BSG0810NDIATMA1 is a dual asymmetric N-channel Power MOSFET designed for industrial, electronic, and power management applications. It delivers a maximum continuous drain current of 50 A and a drain-source voltage threshold of 25 V, packaged in a compact 8-pin TISON-8 surface mount format. The device integrates a monolithic Schottky-like diode providing improved efficiency and reduced conduction losses.

This MOSFET supports industrial grade operating temperatures ranging from -55°C to 150°C, making it suitable for a wide range of harsh environments and demanding applications including power conversion, motor drives, and switching power supplies.

The device’s low typical gate charge of 8.4nC enables fast switching and reduced drive losses, while its power dissipation rating of 6.25 W ensures operation with adequate thermal management. The maximum gate-source voltage of 16 V provides added robustness for gate drive applications.

Manufactured with halogen-free materials, it complies fully with IEC61249-2-21 standards and meets RoHS and JEDEC requirements. The Pb-free plating supports environmentally responsible assembly processes. This Power MOSFET features two elements per chip supporting dual-channel operation for optimized performance in parallel and complementary switching topologies.

This MOSFET features an 8-pin TISON-8 surface mount package. Typical gate charge of 8.4 nC at gate-source voltage. Maximum power dissipation capacity of 6.25 W for reliable operation. Operating temperature range from -55°C to 150°C.

Integrated monolithic Schottky-like diode for enhanced performance. Halogen-free construction meeting IEC61249-2-21 standards. Lead plating is Pb-free and RoHS compliant. Designed with two elements per chip supporting dual channel functionality.

Maximum gate-source voltage rating of 16 V ensures robust switching. Forward voltage of 1 V typical enhances efficient conduction.

This MOSFET is ideal for use in power electronics, industrial control systems, automotive electronics, and power management modules. Its high current capability and efficient switching make it suitable for complex PCB assemblies and high-reliability applications.

Explore the Infineon range of MOSFETs available at EnvMart to equip your industrial and electronic projects with quality semiconductor components.

Infineon Dual Asymmetric N-Channel Power MOSFET, 50 A Continuous Drain Current, 25 V Drain Source Voltage BSG0810NDIATMA1
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 50 A.

The maximum drain-source voltage for this model is 25 V.

The typical gate charge at gate-source voltage is 8.4 nC.

The maximum power dissipation capacity is 6.25 W.

The operating temperature range for this MOSFET is from -55°C to 150°C.

This MOSFET is packaged in an 8-pin TISON-8 surface mount format.

It complies with RoHS, IEC61249-2-21, and JEDEC standards.

This MOSFET has two elements per chip, supporting dual-channel functionality.

The maximum gate-source voltage rating is 16 V.

The typical forward voltage is 1 V.

This MOSFET features an N-channel type.

The country of origin for this MOSFET is India.

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