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onsemi Small Signal NPN Bipolar Transistor 50 V 800 mA TO-92 3-Pin BC33740BU

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onsemi Small Signal NPN Bipolar Transistor 50 V 800 mA TO-92 3-Pin BC33740BU

Name: onsemi Small Signal NPN Bipolar Transistor 50 V 800 mA TO-92 3-Pin BC33740BU
Brand: onsemi
SKU: 130117
Price: 0.08 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	BC33740BU
Width	4.19mm
Mount Type	Through Hole
Series	BC337
Maximum Operating Temperature	150°C
Package Type	TO-92
Pin Count	3
Maximum Collector Emitter Voltage Vceo	50V
Minimum DC Current Gain hFE	160
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi BC337-40ZL1G NPN Bipolar Transistor, 800 mA, 45 V, 3-Pin TO-92Brand	ON Semiconductor

Key Features

Operates with a maximum collector current of 800 mA.
Maximum collector-emitter voltage of 50 V ensures suitability for moderate voltage applications.
Packaged in industry-standard TO-92 plastic case with 3 pins for through-hole mounting.
High current gain with a minimum hFE of 160.
Stable performance up to a transition frequency of 100 MHz.
Capable of dissipating power up to 625 mW for reliable operation.
Maximum operating temperature of 150°C supports demanding environments.
Designed with NPN transistor polarity for common switching and amplification circuits.

Product Description

onsemi BC33740BU is a small signal NPN bipolar junction transistor (BJT) designed to provide reliable switching and amplification in various electronic circuits. Featuring a maximum DC collector current of 800 mA and a maximum collector-emitter voltage rating of 50 V, this transistor fits well in moderate voltage and current applications.

The BC33740BU comes in the widely used TO-92 plastic package with three pins designed for through-hole mounting on printed circuit boards, facilitating easy integration into prototypes and production units.

With a minimum DC current gain (hFE) of 160 and a maximum transition frequency of 100 MHz, it supports both switching speed and amplification gain, making it suitable for analog and digital electronics design.

The transistor can dissipate up to 625 mW of power with a maximum operating temperature rating of 150°C, ensuring durability and performance even under thermal stress.Its compact footprint, measuring about 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width, makes it practical for space-constrained designs across industrial, automotive, and general electronic applications.

Operates with a maximum collector current of 800 mA. Rated for collector-emitter voltage up to 50 V in a TO-92 package. Single NPN transistor configuration with high gain. Through-hole mount type for ease of use in PCB fabrication.

High power dissipation capacity of 625 mW. Transition frequency supporting up to 100 MHz operation. Maximum emitter-base voltage of 5 V ensures robust switching. Designed to operate at temperatures up to 150°C. Compact dimensions enable versatile circuit integration.

Suitable for applications in industrial automation, control circuits, and general-purpose amplification.

This transistor series is favored in various industrial and electronics environments due to its reliability and performance characteristics. The onsemi BC33740BU is ideal for engineers and technicians seeking a high-quality discrete transistor for their designs or repair needs.

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