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onsemi Digital Transistor BU406G, 400V NPN, Through Hole, TO-220, 3-Pin, 60W

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 9.28mm
Length 10.53mm
Model BU406G
Width 4.83mm
Mount Type Through Hole
Series BU406
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 400V
Maximum Power Dissipation Pd 60W
Transistor Configuration Single

Key Features

  • Suitable for high voltage applications up to 400V.
  • 60W maximum power dissipation ensures robust thermal performance.
  • Classic TO-220 package ensures compatibility with industry-standard PCB footprints.
  • Through hole mounting enables secure installation in circuits.
  • Single transistor configuration ideal for power switching and amplification tasks.
  • NPN polarity allows for fast switching performance.
  • Maximum operating temperature of 150°C extends product lifetime.
  • Low saturation voltage maximizes efficiency in applications.

Product Description

The onsemi BU406G is a high-voltage NPN power transistor designed for demanding industrial, electronic, and commercial applications, requiring robust performance and reliability. With a collector-emitter voltage rating of 400V and maximum power dissipation of 60W, this device is engineered for precision switching and amplification tasks.

This bipolar transistor uses a TO-220 through-hole package with a three-pin format, enabling compatibility with a wide range of circuit board designs. Its NPN configuration delivers fast electronic switching - making it especially suited for horizontal deflection output stages in television and CRT applications. It features a low saturation voltage (maximum VCE(sat) of 1V at 5A) to optimize efficiency and reduce thermal losses.

With a maximum collector-base voltage of 400V, emitter-base voltage up to 6V, and minimum DC current gain (hFE) of 10, the BU406G ensures stable and reliable amplification. It is capable of operating at temperatures up to 150°C, providing durability in challenging thermal environments. The device offers a fast switching speed (tf = 750 ns maximum), facilitating high-frequency operation for industrial and electronic power control.

Measuring 10.53mm in length, 9.28mm in height, and 4.83mm in width, this transistor is compact for dense PCB layouts, while still providing robust handling and thermal characteristics due to its TO-220 form factor. The three-pin configuration supports straightforward integration into both new designs and retrofits.

Typical use cases include industrial control systems, power supplies, switching amplifiers, television and CRT circuits, and any high-voltage or high-current designs requiring reliable NPN transistor performance. The BU406G is suitable for both laboratory and manufacturing environments, with RoHS-compliant construction and a Pb-free package available.

Suitable for high voltage applications up to 400V. Provides up to 60W maximum power dissipation. TO-220 package and through-hole mounting for circuit compatibility. NPN configuration delivers efficient and fast switching.

Single transistor format ideal for power circuit designs. Low saturation voltage improves system efficiency. Minimum DC current gain of 10 for reliable operation. Maximum operating temperature of 150°C ensures thermal durability.

Designed for horizontal deflection output stages in TVs and CRTs. Fast switching performance for demanding electronic applications.

Discover more high-performance Bipolar Transistors in the Electronics & Electricals category. Explore the full onsemi range for advanced components to enhance your industrial power systems with EnvMart.

onsemi Digital Transistor BU406G, 400V NPN, Through Hole, TO-220, 3-Pin, 60W
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Frequently Asked Questions

The BU406G has a maximum collector-emitter voltage rating of 400V.

This model can handle a maximum power dissipation of 60W.

It uses a TO-220 package type, which supports through-hole mounting.

The maximum operating temperature for this transistor is 150°C.

The minimum DC current gain (hFE) for this model is 10.

The BU406G features a single transistor configuration, suitable for various applications.

The BU406G measures 4.83mm in width and 9.28mm in height.

The NPN polarity allows for fast switching performance, making it suitable for power switching and amplification tasks.

It is suitable for industrial control systems, power supplies, switching amplifiers, and television and CRT circuits.

The maximum emitter-base voltage (VEBO) for this transistor is 6V.

The dimensions of the BU406G are 10.53mm in length, 4.83mm in width, and 9.28mm in height.

This model supports through-hole mounting, making it compatible with standard PCB layouts.

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