STMicroelectronics High Voltage PNP Bipolar Transistor SOT-32, -500 mA, -300 V, Through Hole MJE350

The STMicroelectronics MJE350 is a high voltage PNP bipolar transistor designed for demanding circuit applications such as amplification and switching. Featuring a SOT-32 package with through hole mount, this device offers reliable usability in power and signal regulation circuits.

With a maximum DC collector current of -500 mA and collector-emitter voltage rated up to -300 V, the MJE350 delivers robust electrical performance, supporting high voltage demands in electronic designs. This transistor’s maximum power dissipation of 20.8 W allows it to operate efficiently even under challenging loads.

The device includes a single transistor configuration with a straightforward pinout (3 pins), streamlining integration with a range of PCBs. The PNP polarity supports complementary application with NPN devices, and the minimum DC current gain (hFE) of 30 guarantees stable switching characteristics.

The SOT-32 form factor enhances ease of installation and mechanical reliability, while through hole mounting ensures secure connections in professional assemblies. The MJE350 is rated for operation from 0°C to 150°C, making it suitable for industrial, automotive, and laboratory use under varied thermal conditions.

Additional features include collector-base voltage of 300 V, emitter-base voltage up to 3 V, and dimensions of 27.5 mm height, 7.8 mm length, and 2.9 mm width. This transistor is ideal for applications requiring high voltage handling, such as industrial power supplies, motor drive circuits, and instrumentation amplifiers.

Explore the full range of Bipolar Transistors in the Semiconductor category at EnvMart and discover more products from STMicroelectronics for advanced circuit solutions.