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onsemi Dual NPN + PNP Bipolar Transistor 200 mA, 45 V, SOT-363, Surface Mount BC847BPDW1T3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC847BPDW1T3G
Width 2.2mm
Mount Type Surface
Series BC847BPDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 200mA
Maximum Transition Frequency ft 100MHz
Collector Current 200 mA

Key Features

  • Dual NPN and PNP bipolar transistors integrated in a single SOT-363 package.
  • Maximum collector current of 200 mA for general-purpose amplifier and switching applications.
  • High collector-emitter voltage rating up to 45 V for versatility in low power circuits.
  • Surface-mount design ensures compatibility with automated PCB assembly lines.
  • Low power dissipation rated up to 380 mW and high transition frequency of 100 MHz.
  • Compact design with 2.2 mm × 2.2 mm footprint and a profile of 1.1 mm height.
  • Minimum DC current gain (hFE) of 200 provides reliable amplification performance.

Product Description

The onsemi BC847BPDW1T3G is a dual NPN and PNP bipolar transistor designed for reliable signal amplification and switching in compact electronic devices. This model integrates two complementary transistors within a single SOT-363 surface-mount package, making it ideal for use in densely populated printed circuit boards (PCBs) and automated SMT assembly lines.

With a maximum collector current rating of 200 mA, this component is suitable for a variety of low power amplification and digital switching applications, including signal processing, general analog circuits, and interface buffering in industrial control, instrumentation, and consumer electronics. The transistors offer a maximum collector-emitter voltage of 45 V, allowing operation in circuits with a wide voltage range while still maintaining device integrity even under occasional transients or high-side switching tasks.

The BC847BPDW1T3G features a compact package dimension of just 2.2 mm by 2.2 mm, and a height of 1.1 mm, minimizing the space required on a PCB. Its surface-mount (SMD) design supports reflow soldering and integration into automated assembly processes. The 6-pin SOT-363 form factor facilitates easy routing of input, output, and bias connections for both the NPN and PNP transistors housed within.

The device operates reliably across a broad temperature range from -55°C to +150°C, suiting it for applications exposed to varying ambient environments. The high transition frequency of 100 MHz ensures it can handle fast signal edges in digital or analog circuits, while a low maximum emitter-base voltage of 6 V and robust collector-base voltage of 50 V provide flexibility for circuit designers. The minimum DC current gain (hFE) of 200 ensures stable amplification characteristics across the specified operating range.

Power dissipation is rated up to 380 mW, making the BC847BPDW1T3G ideal for small-signal amplification without excessive heat buildup. Thanks to the combination of dual-transistor functionality, SOT-363 packaging, and its electrical ratings, this device is commonly used in signal conditioning, logic level translation, analog input protection, voltage level shifting, and as a driver component in various automation equipment, industrial controls, and commercial electronics.

Key applications include instrumentation amplifiers, analog switching, voltage inverters, and any design requiring complementary transistor pairs in compact, space-saving form. This device enables designers to shrink component count and streamline PCB layouts in space-sensitive applications. Overall, the BC847BPDW1T3G delivers dependable signal handling and efficient board utilization for modern electronic designs.

If you are looking for more transistor options, explore the Bipolar Transistors category to discover additional models from onsemi and other top brands.

onsemi Dual NPN + PNP Bipolar Transistor 200 mA, 45 V, SOT-363, Surface Mount BC847BPDW1T3G
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Frequently Asked Questions

The maximum collector current for the BC847BPDW1T3G is 200 mA, making it suitable for general-purpose amplifier and switching applications.

The maximum collector-emitter voltage rating for this model is 45 V, allowing for versatility in low power circuits.

The BC847BPDW1T3G is packaged in a SOT-363 surface-mount configuration, which supports automated PCB assembly.

This model has a compact footprint of 2.2 mm x 2.2 mm and a height of 1.1 mm, minimizing space on a PCB.

The minimum DC current gain (hFE) for the BC847BPDW1T3G is 200, providing reliable amplification performance.

This transistor has a maximum power dissipation rating of 380 mW, making it suitable for small-signal amplification.

The BC847BPDW1T3G operates reliably across a temperature range from -55°C to +150°C, suitable for various ambient environments.

The maximum transition frequency for this transistor is 100 MHz, allowing it to handle fast signal edges effectively.

The maximum emitter-base voltage (VEBO) for this model is 6 V, providing flexibility for circuit designers.

This model is commonly used in signal conditioning, logic level translation, and as a driver component in various automation equipment and consumer electronics.

The BC847BPDW1T3G features a 6-pin configuration, facilitating easy routing of connections for both NPN and PNP transistors.

The maximum collector-base voltage (VCBO) for this transistor is 50 V, ensuring it can withstand high-side switching tasks.

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