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ROHM DTC114ECAT116 Digital Transistor NPN 50 V 100 mA SOT-23 3-Pin Surface Mount

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.2mm
Length 3.1mm
Model DTC114ECAT116
Width 1.5mm
Mount Type Surface
Series DTC114ECA
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 50V
Maximum Power Dissipation Pd 200mW
Transistor Configuration Common Emitter

Key Features

  • NPN digital transistor with built-in bias resistors simplifies circuit design.
  • Supports a maximum collector-emitter voltage of 50 V for a wide application range.
  • Maximum continuous collector current of 100 mA for switching and amplification tasks.
  • Surface-mount SOT-23 package ensures compactness and easy integration into PCBs.
  • Operates reliably up to a maximum junction temperature of 150°C.
  • Common emitter configuration enhances flexibility for digital signal interfacing.
  • High frequency response with a minimum DC current gain hFE of 30.
  • Suitable for high-density, automated assembly and production processes.

Product Description

The ROHM DTC114ECAT116 is a digital NPN transistor featuring integrated bias resistors, which provides a compact and efficient solution for digital switching and amplification in a wide array of electronic devices. Engineered using the SOT-23 surface-mount package with three pins, it allows for high-density board layouts while minimizing component count and assembly time.

This high-quality transistor accommodates a maximum collector-emitter voltage of 50 V and a continuous collector current up to 100 mA, making it well suited for switching digital signals, driving loads, and signal interfacing in both consumer electronics and industrial equipment. Integrated resistors remove the need for separate external biasing, streamlining the design of logic circuits and microcontroller interfaces.

Designed with a common emitter configuration, the DTC114ECAT116 supports industry-standard circuit topologies. Its minimum DC current gain (hFE) of 30 enables efficient amplification, and its robust construction ensures reliable operation up to a junction temperature of 150°C. The SOT-23 surface-mount design offers easy placement for automated assembly lines, optimizing mass production workflows.

With compact package dimensions of 3.1 mm in length, 1.5 mm in width, and 1.2 mm in height, this transistor occupies minimal board space while retaining high electrical performance. Its 3-pin standard layout ensures compatibility with a broad range of bias-resistor digital NPN transistor sockets.

Typical applications include signal switching, digital logic level shifting, and driving small loads in industrial controls, instrumentation, consumer electronics, communication modules, and microcontroller-based systems.

Overall, the ROHM DTC114ECAT116 combines high voltage and current ratings, integrated bias resistors, and a surface-mount SOT-23 package to deliver a reliable, space-saving solution for modern circuit design needs. Explore related components and design solutions in the Bipolar Transistors category, and discover more ROHM products for advanced electronics development on EnvMart.

ROHM DTC114ECAT116 Digital Transistor NPN 50 V 100 mA SOT-23 3-Pin Surface Mount
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Frequently Asked Questions

The maximum collector-emitter voltage of this model is 50 V.

It supports a maximum continuous collector current of 100 mA.

This transistor is housed in a SOT-23 package with dimensions of 3.1 mm in length, 1.5 mm in width, and 1.2 mm in height.

The minimum DC current gain (hFE) for the DTC114ECAT116 is 30.

It can operate reliably up to a maximum junction temperature of 150°C.

This model features a common emitter configuration, which is standard for digital signal interfacing.

It is an NPN digital transistor with built-in bias resistors.

This model includes integrated bias resistors, simplifying circuit design and eliminating the need for external biasing components.

Typical applications include signal switching, digital logic level shifting, and driving small loads in various electronic devices.

It has a standard 3-pin layout, ensuring compatibility with a broad range of bias-resistor digital NPN transistor sockets.

The maximum power dissipation rating for this model is 200 mW.

The country of origin for this transistor is India.

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