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ROHM N-Channel MOSFET 13.5 A 40 V Enhancement 8-Pin SOP SH8KB7TB1

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 5.2mm
Length 4.05mm
Model SH8KB7TB1
Width 1.75mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOP
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 13.5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 8.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 27nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Maximum continuous drain current of 13.5 A suitable for power switching applications.
  • Low on-resistance of 8.4 milliohms reduces power loss during operation.
  • Surface mount SOP package type with 8 pins for compact PCB designs.
  • Enhancement mode channel operation for efficient switching.
  • Typical gate charge of 27 nanocoulombs at gate voltage.
  • Power dissipation rated at 2 Watts for moderate thermal load capability.
  • Operating temperature range from -55°C to 150°C supports harsh environments.
  • Maximum gate-source voltage of 20 V for device protection.

Product Description

ROHM SH8KB7TB1 N-Channel MOSFET is designed for high efficiency and low on-resistance in power switching applications. With a maximum continuous drain current of 13.5 A and a drain-source voltage rating of 40 V, it performs robustly in various electronic circuits requiring compact surface mount components.

Featuring an 8-pin Small Outline Package (SOP), the device supports enhanced switching through its enhancement mode channel design. It offers a typical gate charge of 27 nC, facilitating fast switching speeds with minimal loss.

This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial electronics, automotive systems, power management units, and manufacturing equipment controls.

The low drain-source resistance of 8.4 mΩ helps minimize conduction losses, improving energy efficiency in the system. Its compact package dimensions (length 4.05 mm, width 1.75 mm, height 5.2 mm) allow for high-density PCB layouts.

Maximum continuous drain current: 13.5 A for demanding power circuits. Low on-resistance of 8.4 mΩ ensures minimal conduction losses. Drain-source voltage rating of 40 V for flexible applications. Compact 8-pin SOP surface mount package design.

Enhancement mode channel type for efficient switching. Gate charge optimized at 27 nC for fast response. Thermal power dissipation rated at 2 W. Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of 20 V for device reliability.

Small device size suitable for high-density electronics.

This ROHM MOSFET is ideal for use in industrial power control, semiconductor circuits, automotive electronics, and other commercial electronic applications requiring high switching performance and compact package size. Explore related semiconductor devices and MOSFET options in the Electronics & Electricals category at EnvMart.

ROHM N-Channel MOSFET 13.5 A 40 V Enhancement 8-Pin SOP SH8KB7TB1
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Frequently Asked Questions

The maximum continuous drain current of this model is 13.5 A, making it suitable for demanding power switching applications.

This MOSFET has a drain-source voltage rating of 40 V, allowing for flexible application in various electronic circuits.

It features a low on-resistance of 8.4 milliohms, which helps minimize conduction losses during operation.

The typical gate charge is 27 nanocoulombs at gate voltage, facilitating fast switching speeds with minimal loss.

This unit operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

It comes in an 8-pin Small Outline Package (SOP), which is designed for compact PCB layouts.

The maximum power dissipation for this MOSFET is rated at 2 Watts, suitable for moderate thermal load capabilities.

The dimensions of this model are 4.05 mm in length, 1.75 mm in width, and 5.2 mm in height.

The maximum gate-source voltage is 20 V, which provides protection for the device during operation.

This model is ideal for use in industrial power control, automotive electronics, and other commercial electronic applications requiring high switching performance.

It features an enhancement mode channel type, which is designed for efficient switching in power applications.

The country of origin for this device is India.

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