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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 4.05mm |
| Model | SH8KB7TB1 |
| Width | 1.75mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13.5A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 8.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 20V |
ROHM SH8KB7TB1 N-Channel MOSFET is designed for high efficiency and low on-resistance in power switching applications. With a maximum continuous drain current of 13.5 A and a drain-source voltage rating of 40 V, it performs robustly in various electronic circuits requiring compact surface mount components.
Featuring an 8-pin Small Outline Package (SOP), the device supports enhanced switching through its enhancement mode channel design. It offers a typical gate charge of 27 nC, facilitating fast switching speeds with minimal loss.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial electronics, automotive systems, power management units, and manufacturing equipment controls.
The low drain-source resistance of 8.4 mΩ helps minimize conduction losses, improving energy efficiency in the system. Its compact package dimensions (length 4.05 mm, width 1.75 mm, height 5.2 mm) allow for high-density PCB layouts.
Maximum continuous drain current: 13.5 A for demanding power circuits. Low on-resistance of 8.4 mΩ ensures minimal conduction losses. Drain-source voltage rating of 40 V for flexible applications. Compact 8-pin SOP surface mount package design.
Enhancement mode channel type for efficient switching. Gate charge optimized at 27 nC for fast response. Thermal power dissipation rated at 2 W. Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of 20 V for device reliability.
Small device size suitable for high-density electronics.
This ROHM MOSFET is ideal for use in industrial power control, semiconductor circuits, automotive electronics, and other commercial electronic applications requiring high switching performance and compact package size. Explore related semiconductor devices and MOSFET options in the Electronics & Electricals category at EnvMart.
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