Infineon NPN Bipolar Transistor 210 mA 16 V 3-Pin SOT-23 BFR106E6327HTSA1

Infineon BFR106E6327HTSA1 is a high-performance NPN bipolar transistor designed for a variety of electronic applications. It has a maximum DC collector current of 210 mA and a collector-emitter voltage rating of 16 V, ensuring robust performance in switching and amplification circuits.

The transistor comes in a compact 3-pin SOT-23 surface mount package with dimensions measuring 2.9 mm in length, 2.4 mm in width, and 1 mm in height, making it suitable for dense PCB layouts.

Its maximum power dissipation is 700 mW, allowing it to operate efficiently with minimal heat generation. The device operates reliably at frequencies up to 5 GHz, making it ideal for RF applications such as signal amplification and processing.

The transistor meets the AEC-Q101 automotive standard, ensuring high reliability and quality for automotive electronics.

This product supports a maximum collector base voltage of 20 V and an emitter base voltage of 3 V with a minimum DC current gain (hFE) of 70, ensuring stable operation and good amplification.

Operating temperature tolerance up to 150°C makes it suitable for harsh industrial and automotive environments. Its single NPN transistor configuration accommodates various circuit needs. The transistor is surface mount type with 3 pins in SOT-23 package.

Max collector current of 210 mA ensures adequate load handling. Max collector emitter voltage rating of 16 V supports low voltage applications. Maximum transition frequency of 5 GHz suits RF designs. Compact form factor enables PCB space saving.

Automotive standard AEC-Q101 compliance guarantees quality. Maximum operating temperature of 150°C improves reliability. Power dissipation rating of 700 mW supports efficient thermal management. This transistor is applicable in industrial, automotive, telecommunications, and consumer electronics sectors for amplification, switching, and signal processing tasks.

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