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Infineon NOR Flash Memory 512 MB, CFI Parallel Interface, 56-Pin TSOP Package S29GL512S11TFI020

Category Flash Memory Brand Infineon Condition New

Specifications

Country of Origin United States
Brand Infineon
Height 1.05mm
Length 18.5mm
Cell Type NOR
Model S29GL512S11TFI020
Width 14.1mm
Mount Type Surface
Series S29GL512
Maximum Operating Temperature 85°C
Package Type TSOP
Minimum Operating Temperature -40°C
Memory size 512MB
Interface Type CFI, Parallel
Standards/Approvals RoHS
Pin Count 56
Maximum Supply Voltage 3.6V
Minimum Supply Voltage 2.7V
Organisation 32M x 16 Bit
Number of Bits per Word 16
Maximum Random Access Time 110ns
Number of Words 32M

Key Features

  • High memory size of 512 MB for extensive data storage.
  • Parallel CFI interface ensuring robust communication with devices.
  • Compact 56-pin TSOP package for efficient PCB layout.
  • Operates reliably from -40°C to 85°C temperature range.
  • Wide voltage supply range from 2.7V to 3.6V.
  • Fast maximum random access time of 110 nanoseconds.
  • Organised as 32M x 16-bit memory structure.
  • Complies with RoHS environmental standards.

Product Description

Infineon S29GL512S11TFI020 is a high-performance NOR Flash Memory device designed for industrial and commercial applications requiring reliable non-volatile data storage. It integrates a 512 MB memory size arranged in a 32M x 16-bit organisation, with a fast parallel CFI interface facilitating high bandwidth communication.

The device is packaged in a 56-pin Thin Small Outline Package (TSOP) ensuring compact integration on printed circuit boards through surface mount technology. Operating voltage ranges from 2.7 volts minimum to 3.6 volts maximum, supporting varied power supply conditions.

Designed for robust environmental tolerance, the memory module functions over a wide operating temperature range from -40°C up to 85°C, suitable for demanding industrial and embedded system environments.

With a maximum random access time of 110 nanoseconds, the device allows for high-speed data retrieval necessary for efficient program execution and data handling in embedded applications.

The NOR cell technology enables non-volatile storage capable of being written and erased in blocks, ideal for program memory storage that is infrequently updated. The product conforms to RoHS standards, reflecting environmentally responsible manufacturing.

Manufactured in the United States, this flash memory component benefits from stringent quality standards to ensure reliability and durability in diverse operational scenarios including industrial control, embedded computing, and telecommunications.

High memory size of 512 MB for extensive data storage. Parallel CFI interface ensuring robust communication with devices. Compact 56-pin TSOP package for efficient PCB layout. Operates reliably from -40°C to 85°C temperature range.

Wide voltage supply range from 2.7V to 3.6V. Fast maximum random access time of 110 nanoseconds. Organised as 32M x 16-bit memory structure. Complies with RoHS environmental standards. Non-volatile NOR cell type for program storage with block erase capability.

Manufactured in the United States ensuring quality and reliability.

This Infineon flash memory is a vital component for industrial, automotive, embedded system, and telecommunications applications requiring reliable, fast, and durable program memory. Browse our extensive catalogue for compatible Flash Memory solutions and Infineon products at EnvMart.

Infineon NOR Flash Memory 512 MB, CFI Parallel Interface, 56-Pin TSOP Package S29GL512S11TFI020
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