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| Country of Origin | India |
|---|---|
| Brand | Winbond |
| Height | 0.6mm |
| Length | 11.1mm |
| Cell Type | SLC NAND |
| Model | W29N02GZBIBA |
| Width | 11.1mm |
| Mount Type | Surface |
| Density | 2Gbit (Single chip solution) |
| Series | W29N02GZ |
| Industrial | -40°C to 85°C |
| Maximum Operating Temperature | 85°C |
| Package Type | VFBGA |
| Minimum Operating Temperature | -40°C |
| Memory size | 2GB |
| Interface Type | Parallel |
| Pin Count | 63 |
| Maximum Supply Voltage | 1.95V |
| Minimum Supply Voltage | 1.7V |
| Supply Current | 20mA |
| Organisation | 256M x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 25μs |
| Number of Words | 256M |
| Bus Width | x8 x16 |
| Vcc | 1.7V to 1.95V |
| Industrial Plus | -40°C to 105°C |
| Random read | 25us |
| Sequential read cycle | 25ns |
| Page program time | 250us(typ.) |
| Block erase time | 2ms(typ.) |
| Read | 13mA(typ.) |
| Program/Erase | 10mA(typ.) |
| CMOS standby | 10uA(typ.) |
Winbond W29N02GZBIBA is a 2 GB Single-Level Cell (SLC) NAND flash memory designed with a parallel interface and housed in a 63-pin VFBGA package. It operates under a supply voltage range of 1.7V to 1.95V, delivering reliable and efficient performance for various industrial and embedded applications.
This flash memory chip supports an organization of 256M x 8 bits, offering a density of 2 Gbit per single chip. It is designed for surface mounting with a compact 11.1mm x 11.1mm footprint and a height of 0.6mm, making it suitable for compact PCB layouts.
Engineered to withstand harsh environments, it operates effectively over an industrial temperature range from -40°C to 85°C, with an extended option up to 105°C for Industrial Plus applications. The device features a fast random read access time of 25µs and a rapid sequential read cycle of 25ns, ensuring swift data retrieval.
The memory supports block erase times typically around 2ms and page program times of 250µs, facilitating efficient writing and erasing processes. With an endurance of 100,000 erase/program cycles and a guaranteed 10-year data retention, it is optimized for long-term embedded system use.
Power consumption is minimized with typical supply current at 20mA during operation and CMOS standby current as low as 10µA, supporting energy-efficient designs. The bus width supports both x8 and x16 configurations, increasing flexibility for different system requirements.
Standard NAND command protocols are supported, along with additional capabilities like Copy Back and two-plane operations. The device is ideal for applications in industrial controls, automotive electronics (though not automotive certified), consumer electronics, and other embedded systems needing reliable, high-performance memory solutions.
Memory size of 2GB with SLC NAND technology enables fast and reliable storage. Compact 63-pin VFBGA package supports surface mount assembly. Low operating voltage between 1.7V and 1.95V for energy-efficient use. Wide temperature tolerance from -40°C to 85°C suitable for industrial environments.
Fast random and sequential read speeds ensure rapid data access. Robust endurance supports 100,000 erase/program cycles with long data retention. Low power consumption in active and standby modes. Flexible bus width options enhance compatibility with various systems.
As part of Electronics & Electricals under Semiconductor components, this flash memory is ideal for industrial, manufacturing, and embedded system applications requiring durable, efficient, and compact non-volatile memory solutions. Browse more Flash Memory and semiconductor components for your project needs on EnvMart.
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