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Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA W29N01HZBINA

Category Flash Memory Brand Winbond Condition New

Specifications

Country of Origin India
Brand Winbond
Height 600μm
Length 11.1mm
Cell Type SLC NAND
Model W29N01HZBINA
Width 11.1mm
Mount Type Surface
Density 1Gbit (Single chip solution)
Series W29N01HZ
Industrial -40°C to 85°C
Maximum Operating Temperature 85°C
Package Type VFBGA
Minimum Operating Temperature -40°C
Memory size 1GB
Interface Type Parallel
Pin Count 63
Maximum Supply Voltage 1.95V
Minimum Supply Voltage 1.7V
Supply Current 25mA
Organisation 128M x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 25μs
Number of Words 128M
Bus Width x8 x16
Vcc 1.7V to 1.95V
Random read 25us
Sequential read cycle 25ns
Page program time 250us(typ.)
Block erase time 2ms(typ.)
Read 13 mA(typ.)
Program/Erase 10mA(typ)
CMOS standby 10uA(typ.)

Key Features

  • Utilizes Single-Level Cell (SLC) NAND technology for reliable performance.
  • Memory size of 1 GB with 128M x 8 bit organization.
  • Surface mount VFBGA package type with 63 pins.
  • Operating voltage range from 1.7V to 1.95V.
  • Industrial operating temperature range of -40°C to 85°C.
  • High endurance with 100,000 erase/program cycles and 10 years data retention.
  • Page program time typically 250 µs, block erase time typically 2 ms.

Product Description

Winbond W29N01HZBINA is a high-performance Single-Level Cell (SLC) NAND flash memory component designed for industrial and commercial electronic applications. It features a 1 GB memory size organized as 128M x 8 bit, providing reliable storage capacity in a compact VFBGA package that supports a 63-pin parallel interface.

Operating over a voltage range of 1.7V to 1.95V and functioning in temperature extremes from -40°C to 85°C, this module is suitable for harsh environmental conditions often encountered in industrial, manufacturing, and automation systems.

The device supports fast random and sequential access with a random read time of 25 µs and sequential read cycles as low as 25 ns. Program and erase operations are optimized for quick performance with typical page program times of 250 µs and block erase times of 2 ms.

Built on SLC NAND technology, the flash memory supports 100,000 erase/program cycles ensuring durability and a decade-long data retention period, making it ideal for long-term embedded memory storage needs.

Power efficiency is key with this flash memory, consuming typically 13 mA during read operations, 10 mA during program/erase cycles, and as low as 10 µA in CMOS standby mode, aiding in low-power embedded system designs.

Its compact footprint with dimensions 11.1 mm x 11.1 mm and a height of 600 µm allows integration into space-constrained PCB layouts. The surface mount VFBGA packaging provides secure mounting and reliable connection integrity for demanding electronic applications.

Winbond W29N01HZBINA flash memory is ideal for use in industrial automation, embedded systems, communication devices, and other semiconductor memory applications requiring robust performance and endurance.

Utilizes Single-Level Cell (SLC) NAND technology for maximum reliability. Memory density of 1 Gbit organized as 128M words x 8 bits. Operates under a 63-pin Very Fine Ball Grid Array (VFBGA) surface mount package. Industrial operating temperature range from -40°C to 85°C.

Low power consumption for efficient embedded system design. Fast random and sequential read access times. High endurance and data retention suitable for industrial use. Supports standard NAND command sets and additional copy-back command.

Compact chip size enabling integration in tight electronic assemblies. Designed for applications in industrial, communication, and embedded memory systems. Browse our extensive selection of semiconductor Flash Memory components at EnvMart for industrial-grade solutions.

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA W29N01HZBINA
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Frequently Asked Questions

The Winbond W29N01HZBINA has a memory size of 1 GB, organized as 128M x 8 bits.

It operates within a voltage range of 1.7V to 1.95V.

This model functions effectively in an industrial temperature range from -40°C to 85°C.

The random read time is typically 25 µs, while the sequential read cycles can be as low as 25 ns. The page program time is typically 250 µs, and the block erase time is typically 2 ms.

It supports up to 100,000 erase/program cycles, ensuring high endurance for applications.

The component is packaged in a VFBGA type with 63 pins.

During read operations, it typically consumes 13 mA.

The dimensions are 11.1 mm in length and width, with a height of 600 µm.

It is designed for use in industrial automation, embedded systems, and communication devices.

During program and erase cycles, it typically consumes 10 mA.

The maximum random access time is 25 µs.

It supports a bus width of x8 and x16.

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