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Winbond SLC NAND 4 GB Parallel Flash Memory 63-Pin VFBGA W29N04GVBIAF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Winbond |
| Height | 600μm |
| Length | 11.1mm |
| Cell Type | SLC NAND |
| Model | W29N04GVBIAF |
| Width | 11.1mm |
| Mount Type | Surface |
| Density | 4Gbit (Single chip solution) |
| Series | W29N04GV |
| Industrial | -40°C to 85°C |
| Maximum Operating Temperature | 85°C |
| Package Type | VFBGA |
| Minimum Operating Temperature | -40°C |
| Memory size | 4GB |
| Interface Type | Parallel |
| Pin Count | 63 |
| Maximum Supply Voltage | 3.6V |
| Minimum Supply Voltage | 2.7V |
| Supply Current | 35mA |
| Organisation | 512M x 8 Bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 25μs |
| Number of Words | 512M |
| Bus Width | x8 |
| Vcc | 2.7V to 3.6V |
| Random read | 25us |
| Sequential read cycle | 25ns |
| Page program time | 250us(typ.) |
| Block erase time | 2ms(typ.) |
| Read | 25mA(typ.) |
| Program/Erase | 25mA(typ.) |
| CMOS standby | 10uA(typ.) |
Key Features
- Utilizes Single-Level Cell (SLC) NAND technology for enhanced endurance and data retention.
- Memory size of 4GB organized as 512M x 8 bits suitable for high-density storage requirements.
- Operates within a voltage range of 2.7V to 3.6V ensuring compatibility with various electronic systems.
- Industrial-grade operating temperature range from -40°C to 85°C for robust performance in harsh environments.
- Low typical supply current of 25mA during read and program/erase operations to minimize power consumption.
- Fast random read access time of 25 microseconds for efficient data retrieval.
- Surface mount package with dimensions 11.1mm x 11.1mm x 600μm fit compact PCB layouts.
- Standard NAND command set supported with additional cache and copy back operations.
Product Description
Winbond W29N04GVBIAF is a Single-Level Cell (SLC) NAND Flash Memory module designed to provide reliable 4GB storage with a parallel interface housed in a 63-pin Very Fine Ball Grid Array (VFBGA) package. It delivers high endurance and fast read/write performance suitable for various embedded and industrial applications requiring robust memory components.
This flash memory has a memory organization of 512M x 8 bits, supporting a standard NAND command set along with advanced features such as sequential cache read, random cache read, cache program, copy back, and two-plane operation to improve efficiency and throughput.
The device operates safely at voltages ranging from 2.7V to 3.6V, with a low power consumption design featuring typical supply currents of 25mA during read and program/erase operations and CMOS standby current as low as 10µA. It withstands industrial temperature ranges from -40°C to 85°C, making it suitable for stringent environmental conditions.
Physical dimensions of 11.1mm length, 11.1mm width, and 600µm height enable compact system integration. The memory architecture includes page sizes of 2112 bytes (2048 data + 64 spare), block sizes of 64 pages (128KB + 4KB), and offers endurance of up to 100,000 erase/program cycles with 10 years of data retention, ensuring long-lasting performance and reliability.
The W29N04GV series is ideal for use in industrial controls, automotive electronics (non-automotive standard), communication devices, and other applications requiring dependable flash memory with fast access times and low power consumption.
Utilizes Single-Level Cell (SLC) NAND technology for high endurance. Memory capacity of 4GB with 512M x 8 bits organization. Supports parallel interface for fast data communication. Operates over a wide voltage range of 2.7V to 3.6V.
Industrial temperature range from -40°C to 85°C. 63-pin VFBGA surface mount package suitable for compact PCB design. Fast random access time of 25 microseconds and page program time of 250 microseconds. Low power consumption with 25mA typical supply current during operation.
Endurance rating of 100,000 program/erase cycles and 10-year data retention. Complies with standard NAND flash command sets including advanced cache operations. Explore more Winbond Flash Memory products and related semiconductor components at EnvMart for your industrial and embedded system solutions.
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Frequently Asked Questions
This model has a memory capacity of 4GB, organized as 512M x 8 bits.
It operates within a voltage range of 2.7V to 3.6V, ensuring compatibility with various electronic systems.
The maximum random access time for this unit is 25 microseconds, allowing for efficient data retrieval.
The dimensions of the surface mount package are 11.1mm x 11.1mm with a height of 600μm.
It has an endurance rating of up to 100,000 program/erase cycles, ensuring long-lasting performance.
The typical supply current during read and program/erase operations is 25mA.
It supports a parallel interface for fast data communication.
The page size is 2112 bytes (2048 data + 64 spare), and the block size consists of 64 pages (128KB + 4KB).
It complies with the standard NAND command set and supports advanced features such as cache operations.
The typical CMOS standby current is as low as 10µA, minimizing power consumption when idle.
This flash memory is suitable for industrial controls, automotive electronics, and communication devices requiring reliable memory.
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