Winbond 1 GB Single-Level Cell SLC NAND Parallel Flash Memory 63-Pin VFBGA W29N01HVBINF

Winbond W29N01HVBINF is a high-performance 1 GB Single-Level Cell (SLC) NAND flash memory, packaged in a 63-pin Very Fine Ball Grid Array (VFBGA) suitable for surface mounting in electronic applications. It supports parallel interface communication with a bus width of x8 and offers robust industrial-grade operating temperature range from -40°C to 85°C, ideal for demanding environments.

This flash memory chip features a memory organization of 128 million words of 8 bits each (128M x 8), with a page size of 2,112 bytes (2,048 bytes user data plus 64 bytes spare) and a block size of 64 pages. It employs SLC NAND technology providing enhanced endurance, supporting up to 100,000 program/erase cycles and guaranteeing 10 years of data retention reliability.

The chip supports standard NAND command sets and implements additional commands like Copy Back, allowing efficient memory data manipulation. It delivers fast read performance, with random read access times as low as 25 microseconds and sequential read cycle timing of 25 nanoseconds. Programming and erase times are typically 250 microseconds and 2 milliseconds respectively per page and block.

Power consumption is optimized with read supply current approximately 25 mA and program/erase typical current at 25 mA under 3 volts. Standby CMOS current is minimal at 10 microamperes, making it energy efficient for embedded and battery-powered systems.

The mechanical footprint is compact at 11.1 mm length, 11.1 mm width, and 600 microns height, making it suitable for space-constrained electronic design. Package type VFBGA provides superior thermal and electrical performance over traditional TSOP packaging.

Winbond's expertise in NAND flash memory technology ensures this chip is highly suitable for industrial, embedded systems, telecommunications, and consumer electronics applications requiring reliable, high-endurance memory solutions.

The memory density is 1 Gbit with 128M x 8 organization. Random read access time is 25 microseconds with sequential read cycle of 25 nanoseconds. Page program time is approximately 250 microseconds and block erase time is 2 milliseconds.

Supply current during read and program/erase operations is typically 25 to 35 mA at 3V. Package type is VFBGA with a compact 63-pin count optimized for surface mount. Designed with standard NAND command set and features copy back command support.

High endurance of 100,000 program/erase cycles with 10-year data retention. Explore more products in the Flash Memory category at EnvMart for industrial and embedded semiconductor solutions.