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onsemi NTMFS N-Channel MOSFET 136 A 80 V Enhancement Mode 8-Pin DFN NTMFSC004N08MC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.25mm |
| Length | 5.1mm |
| Model | NTMFSC004N08MC |
| Width | 950μm |
| Mount Type | Surface |
| Series | NTMFS |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, MSL1 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 136A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 43.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Offers an enhancement mode N-Channel MOSFET with 8-pin DFN package for surface mount use.
- Maximum continuous drain current of 136 A suitable for high current power switching.
- Rated for maximum drain-source voltage of 80 V ensuring robust voltage handling capability.
- Low maximum drain-source resistance of 4 milliohms to minimize conduction losses.
- Capable of dissipating up to 127 W power ensuring high power management efficiency.
- Typical gate charge of 43.4 nC at Vgs signifies efficient gate drive performance.
- Operating temperature range from -55°C to 175°C for reliable performance in harsh environments.
- Compliant with RoHS and features MSL1 packaging for environmental safety and durability.
Product Description
onsemi NTMFSC004N08MC is a high power N-Channel Enhancement MOSFET designed for advanced electronic applications.
This MOSFET features a maximum continuous drain current rating of 136 A and can withstand drain-source voltages up to 80 V, making it suitable for demanding power switching applications such as DC-DC converters, synchronous rectifiers, and load switching operations in industrial, automotive, and power management environments.
The device is packaged in an 8-pin DFN surface mount format optimized for heat dissipation and compact PCB layout. Its maximum drain-source resistance of 4 milliohms ensures low conduction losses, improving overall circuit efficiency and thermal performance. It has an enhancement channel mode suitable for controlled switching.
Rated maximum power dissipation is 127 W, with an operating temperature range from -55°C to 175°C, ensuring reliability under strenuous thermal conditions. The typical gate charge of 43.4 nC at gate-source voltage indicates efficient switching characteristics and reduced gate drive power consumption.
Designed with environmental compliance, this MOSFET meets RoHS standards and provides MSL1 packaging robustness for handling and assembly. Enhancement mode N-Channel MOSFET in compact 8-pin DFN package. 136 Amp continuous current rating supporting high power loads.
Voltage rating up to 80 V for versatile power electronics applications. Low on-resistance reduces power loss and enhances efficiency. Wide operating temperature range from -55°C to 175°C for harsh industrial use. RoHS compliant with MSL1 packaging ensuring safety and durability.
Suitable for DC-DC converters, synchronous rectifiers, and load switching.
This product is ideal for use in electronic manufacturing, industrial power supplies, automotive power electronics, and other high-power semiconductor applications. Explore more from onsemi and discover a range of semiconductor components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 136 A, making it suitable for high current power switching applications.
This MOSFET is rated for a maximum drain-source voltage of 80 V, ensuring robust voltage handling capability.
The typical gate charge at gate-source voltage (Vgs) is 43.4 nC, indicating efficient gate drive performance.
The maximum power dissipation for this unit is rated at 127 W, allowing for effective power management.
The dimensions of this model are 6.25 mm in height, 5.1 mm in length, and 950 μm in width.
This model is packaged in an 8-pin DFN format, optimized for surface mounting and heat dissipation.
The maximum drain-source resistance is 4 milliohms, which minimizes conduction losses and improves efficiency.
Yes, it is compliant with RoHS standards and features MSL1 packaging for environmental safety and durability.
This model features an N-channel type with enhancement mode, suitable for controlled switching operations.
The maximum gate-source voltage (Vgs) for this unit is 20 V, providing a safe operating limit for gate drive applications.
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