Vishay P-Channel MOSFET 6.8 A, 200 V Enhancement, 3-Pin TO-263 IRF9640STRRPBF

Vishay IRF9640STRRPBF is a P-Channel MOSFET designed for electronic power switching and amplification tasks. It is specified to handle a maximum continuous drain current of 6.8 A and withstand a maximum drain-source voltage of 200 V, making it suitable for medium power industrial, laboratory, and commercial electronic equipment.

The device uses enhancement mode channel technology and is housed in a 3-pin TO-263 surface-mount package, facilitating compact PCB layouts. Its power dissipation rating is 125 W, enabling reliable operation under high load conditions.

Operating temperature range extends from -55°C minimum to 150°C maximum, ensuring stable performance in varied environmental conditions. Its low maximum drain-source resistance of 500 mΩ minimizes conduction losses, improving efficiency.

The typical gate charge of 44 nC allows for efficient gate drive with minimal power consumption. The maximum gate-source voltage range of -20 V to +20 V provides robust gate insulation and protection.

Physical dimensions include a width of 9.65 mm, length of 10.67 mm, and height of 4.83 mm, making it suitable for space-conscious designs in electronic circuits. It conforms to standard industrial packaging without specific automotive certifications.

This MOSFET is widely applicable in switching regulators, power management systems, motor control circuits, and general-purpose electronic power devices in industrial, commercial, and laboratory settings.

Maximum continuous drain current of 6.8 A ensures efficient power handling. Drain-source voltage rating of 200 V supports medium-voltage applications. Enhancement mode channel type provides stable switching characteristics.

Surface mount TO-263 package allows compact, high-density PCB designs. Operates reliably in a wide temperature range from -55°C to 150°C. Maximum power dissipation of 125 W facilitates high power operation. Low Rds(on) of 500 mΩ reduces conduction losses and heat generation.

Typical gate charge of 44 nC supports fast switching with low gate drive power. Physically compact with 3-pin configuration and small footprint. Explore Vishay MOSFETs and related semiconductor components at EnvMart for reliable electronic component sourcing and integration.