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onsemi N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 Package BSS138LT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin Czech Republic
Brand onsemi
Height 940μm
Length 2.9mm
Model BSS138LT1G
Width 1.3mm
Mount Type Surface
Series BSS138L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 200mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 3.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 225mW
Typical Gate Charge Qg @ Vgs 160nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Equipped with a compact 3-pin SOT-23 surface mount package for efficient PCB integration.
  • Maximum drain-source resistance (Rds) of 3.5 Ω ensures precise switching performance.
  • Handles maximum power dissipation of 225 mW with a wide operating temperature range from -55°C to 150°C.
  • Typical gate charge is 160 nC at Vgs, enhancing switching speed stability.
  • Designed with a maximum gate-source voltage rating of -20 V to +20 V for robust control.
  • Measures 2.9 mm in length, 1.3 mm in width, and 940 μm in height for compact electronic assembly.
  • Forward voltage of 1.2 V supports efficient conduction under load.

Product Description

The onsemi BSS138LT1G is a high-quality N-Channel enhancement mode MOSFET designed for use in power management and switching applications. This compact 3-pin SOT-23 package is ideal for surface-mount technology (SMT) designs, providing efficient space utilization on printed circuit boards. It supports a continuous drain current of up to 200 mA and withstands a maximum drain-source voltage of 50 V, making it suitable for low power electronic circuits.

This MOSFET exhibits a maximum drain-source resistance of 3.5 Ω, ensuring minimal conduction losses and enhanced switching precision. Its power dissipation rating of 225 mW accommodates moderate power loads while maintaining reliability across a broad temperature range from -55°C to 150°C, which makes it reliable for industrial and commercial environments.

The typical gate charge of 160 nC at the gate-source voltage supports efficient and fast switching performance, while the gate voltage withstands peaks from -20 V to +20 V, protecting the device against voltage spikes. The physical dimensions (2.9 mm length, 1.3 mm width, and 940 μm height) allow for compact integration into modern electronics.

This device finds applicability across diverse sectors including industrial automation, consumer electronics, telecommunications, and automotive electronics where precise low-power switching is needed.

Compact 3-pin SOT-23 SMT package for space-saving PCB design. N-Channel enhancement mode for efficient switching applications. Handles 200 mA continuous drain current with 50 V maximum drain-source voltage. Low drain-source resistance of 3.5 Ω minimizes conduction loss.

Wide operating temperature range from -55°C to 150°C for rugged applications. Typical gate charge of 160 nC supports fast switching. Robust gate-source voltage rating of -20 V to +20 V protects against spikes. Forward voltage of 1.2 V enables effective conduction performance.

Manufactured in Czech Republic under trusted onsemi brand standards. Explore the full range of onsemi MOSFET devices and other semiconductor components at EnvMart for reliable industrial and electronic design solutions.

onsemi N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 Package BSS138LT1G
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Frequently Asked Questions

This model can handle a maximum continuous drain current of 200 mA.

The maximum drain-source voltage for this MOSFET is 50 V.

It exhibits a maximum drain-source resistance (Rds) of 3.5 Ω, which minimizes conduction losses.

The typical gate charge is 160 nC at the gate-source voltage.

This MOSFET measures 2.9 mm in length, 1.3 mm in width, and 940 μm in height.

It operates within a wide temperature range from -55°C to 150°C.

The maximum power dissipation for this model is 225 mW.

It comes in a compact 3-pin SOT-23 surface mount package.

The maximum gate-source voltage rating is -20 V to +20 V.

This MOSFET is suitable for power management and switching applications across various sectors including industrial automation and consumer electronics.

The forward voltage is 1.2 V, which supports effective conduction under load.

This model is manufactured in the Czech Republic.

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