onsemi Isolated 2 N-Channel Power MOSFET, 680 mA, 25 V, Enhancement Mode, 6-Pin SOT-23 FDC6303N

onsemi FDC6303N is an isolated 2 N-channel power MOSFET designed for efficient power control and switching in electronic circuits. This device supports a maximum continuous drain current of 680 mA and a maximum drain-source voltage of 25 V in an enhancement mode configuration, packaged conveniently in a 6-pin SOT-23 surface mount format.

Engineered for reliability, it features a low maximum drain-source resistance of 450 milliohms, which reduces power loss during operation and allows for effective management of power dissipation rated up to 900 mW. The transistor's isolated configuration includes two elements per chip enhancing performance in digital FET applications.

Operating within a wide temperature range from -55°C to +150°C, this MOSFET is suitable for industrial electronics, power management circuits, and other applications demanding robustness under varying environmental conditions. The device's compact physical dimensions (3 mm length, 1.7 mm width, and 1 mm height) facilitate integration into densely populated printed circuit boards and surface mount technology assemblies.

The FDC6303N features a typical gate charge value of 1.64 nC at gate-source voltage ensuring rapid switching with minimal switching losses, while the maximum gate-source voltage is rated at 8 V to protect gate integrity. A forward voltage drop of 0.83 V further optimizes efficiency of the device in controlling load currents.

Although this MOSFET does not meet automotive standards, it is widely used in various electronic components, power supply circuits, and semiconductor applications. Its isolated transistor configuration enhances suitability for power switch applications in industrial, commercial, and laboratory environments.

This MOSFET has a compact 6-pin SOT-23 surface mount package for easy PCB integration. Supports continuous drain current of 680 mA for moderate power loads. Low drain-source resistance of 450 milliohms reduces energy loss.

Wide operating temperature range from -55°C to +150°C for harsh conditions. Enhancement mode N-channel transistor for effective switching. Maximum power dissipation of 900 mW enables reliable operation. Typical gate charge of 1.64 nC ensures fast response times.

Maximum gate-source voltage rated at 8 V for device protection. Compact size of 3 x 1.7 x 1 mm for space-saving design. Non-automotive grade, suited for industrial and commercial electronics. Explore more high-quality Power MOSFETs and semiconductor components at EnvMart for your advanced electronic projects and industrial power management needs.