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onsemi Industrial Power N-Channel MOSFET LFPAK 71 A, 40 V, 50 W Pd, 4-Pin Surface Mount NTMYS5D3N04CTWG

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onsemi Industrial Power N-Channel MOSFET LFPAK 71 A, 40 V, 50 W Pd, 4-Pin Surface Mount NTMYS5D3N04CTWG

Name: onsemi Industrial Power N-Channel MOSFET LFPAK 71 A, 40 V, 50 W Pd, 4-Pin Surface Mount NTMYS5D3N04CTWG
Brand: onsemi
SKU: 161526
Price: 0.97 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.15mm
Length	5mm
Model	NTMYS5D3N04CTWG
Width	4.25mm
Mount Type	Surface
Series	NTMYS5D3N04C
Maximum Operating Temperature	175°C
Package Type	LFPAK
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	71A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	5.3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	50W
Typical Gate Charge Qg @ Vgs	16nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 71 A for high power applications.
Drain-source voltage rating of 40 V enabling robust switching.
Low Rds(on) of 5.3 mΩ to minimize conduction losses.
Maximum power dissipation of 50 W ensuring thermal reliability.
Compact 4-pin LFPAK surface-mount package for space-saving PCB design.
Enhancement mode channel operation for efficient MOSFET switching.
Typical gate charge of 16 nC reduces driver losses.
Wide operating temperature range from -55°C to 175°C for industrial use.

Product Description

onsemi NTMYS5D3N04CTWG is an industrial-grade N-Channel MOSFET designed to provide high performance in compact and efficient electronic applications. This device features a surface-mount 4-pin LFPAK package with dimensions approximately 5 mm x 4.25 mm x 1.15 mm, optimized for space-saving PCB layouts.

This enhancement mode MOSFET supports a maximum continuous drain current of 71 A and a maximum drain-source voltage of 40 V, making it suitable for industrial power switching and control tasks. It has a low drain-source resistance of 5.3 mΩ, which minimizes conduction losses, and a maximum power dissipation of 50 W to ensure sustained operation under demanding conditions.

The MOSFET exhibits a typical gate charge of 16 nC at Vgs, reducing driver circuit power consumption and enhancing efficiency. It operates over a wide temperature range from -55°C up to 175°C, supporting harsh industrial environments. With a forward voltage of 1.2 V and a maximum gate-source voltage rating of 20 V, the device ensures stable and reliable control in switching applications.

This device is Pb−free complying with environmental standards, and the LFPAK4 package size is an industry standard facilitating integration into modern compact electronics. It is ideal for use in industrial electronic controls, power management, switching power supplies, and other high-current switching circuits.

Maximum continuous drain current of 71 A for high power applications. Drain-source voltage rating of 40 V enabling robust switching. Low Rds(on) of 5.3 mΩ to minimize conduction losses. Maximum power dissipation of 50 W ensuring thermal reliability.

Compact 4-pin LFPAK surface-mount package for space-saving PCB design. Enhancement mode channel operation for efficient MOSFET switching. Typical gate charge of 16 nC reduces driver losses. Wide operating temperature range from -55°C to 175°C for industrial use.

Forward voltage of 1.2 V supporting efficient conduction. Maximum gate-source voltage of 20 V for reliable gate control. Explore EnvMart’s comprehensive range of semiconductor components including MOSFETs and power devices for industrial and commercial electronics projects.

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